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Results: 1-22 |
Results: 22
TRACE RARE-GASES OPTICAL-EMISSION SPECTROSCOPY FOR DETERMINATION OF ELECTRON TEMPERATURES AND SPECIES CONCENTRATIONS IN CHLORINE-CONTAININGPLASMAS
Authors: DONNELLY VM MALYSHEV MV KORNBLIT A CIAMPA NA COLONELL JI LEE JTC
Citation: Vm. Donnelly et al., TRACE RARE-GASES OPTICAL-EMISSION SPECTROSCOPY FOR DETERMINATION OF ELECTRON TEMPERATURES AND SPECIES CONCENTRATIONS IN CHLORINE-CONTAININGPLASMAS, JPN J A P 1, 37(4B), 1998, pp. 2388-2393
PRELIMINARY EMPIRICAL RESULTS SUGGESTING THE MAPPING OF DYNAMIC IN-SITU PROCESS SIGNALS TO REAL-TIME WAFER ATTRIBUTES IN A PLASMA ETCH PROCESS
Authors: RIETMAN EA IBBOTSON DE LEE JTC
Citation: Ea. Rietman et al., PRELIMINARY EMPIRICAL RESULTS SUGGESTING THE MAPPING OF DYNAMIC IN-SITU PROCESS SIGNALS TO REAL-TIME WAFER ATTRIBUTES IN A PLASMA ETCH PROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 131-136
EFFECTS OF PLASMA CONDITIONS ON THE SHAPES OF FEATURES ETCHED IN CL-2AND HBR PLASMAS - I - BULK CRYSTALLINE SILICON ETCHING
Authors: VYVODA MA LEE H MALYSHEV MV KLEMENS FP CERULLO M DONNELLY VM GRAVES DB KORNBLIT A LEE JTC
Citation: Ma. Vyvoda et al., EFFECTS OF PLASMA CONDITIONS ON THE SHAPES OF FEATURES ETCHED IN CL-2AND HBR PLASMAS - I - BULK CRYSTALLINE SILICON ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3247-3258
DYNAMIC IMAGES OF PLASMA PROCESSES - USE OF FOURIER BLOBS FOR END-POINT DETECTION DURING PLASMA-ETCHING OF PATTERNED WAFERS
Authors: RIETMAN EA LEE JTC LAYADI N
Citation: Ea. Rietman et al., DYNAMIC IMAGES OF PLASMA PROCESSES - USE OF FOURIER BLOBS FOR END-POINT DETECTION DURING PLASMA-ETCHING OF PATTERNED WAFERS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1449-1453
A NEW ALGORITHM FOR REAL-TIME THIN-FILM THICKNESS ESTIMATION GIVEN IN-SITU MULTIWAVELENGTH ELLIPSOMETRY USING AN EXTENDED KALMAN FILTER
Authors: GALARZA CG KHARGONEKAR PP LAYADI N VINCENT TL RIETMAN EA LEE JTC
Citation: Cg. Galarza et al., A NEW ALGORITHM FOR REAL-TIME THIN-FILM THICKNESS ESTIMATION GIVEN IN-SITU MULTIWAVELENGTH ELLIPSOMETRY USING AN EXTENDED KALMAN FILTER, Thin solid films, 313, 1998, pp. 156-160
PLASMA-ETCHING OF SUBMICRON DEVICES - IN-SITU MONITORING AND CONTROL BY MULTIWAVELENGTH ELLIPSOMETRY
Authors: MAYNARD HL LAYADI N LEE JTC
Citation: Hl. Maynard et al., PLASMA-ETCHING OF SUBMICRON DEVICES - IN-SITU MONITORING AND CONTROL BY MULTIWAVELENGTH ELLIPSOMETRY, Thin solid films, 313, 1998, pp. 398-405
INCIDENCE ANGLE DISTRIBUTIONS OF IONS BOMBARDING GROUNDED SURFACES INHIGH-DENSITY PLASMA REACTORS
Authors: AYDIL ES QUINIOU BOM LEE JTC GREGUS JA GOTTSCHO RA
Citation: Es. Aydil et al., INCIDENCE ANGLE DISTRIBUTIONS OF IONS BOMBARDING GROUNDED SURFACES INHIGH-DENSITY PLASMA REACTORS, Solid-state electronics, 42(5), 1998, pp. 75-82
DISCRIMINATION OF CHANGES IN THE SLOPE OF THE AMPLITUDE SPECTRA OF COMPLEX VISUAL IMAGES BY HUMAN OBSERVERS MAY REQUIRE COMPARISON OF CONTRAST BETWEEN DIFFERENT SPATIAL-FREQUENCY BANDS
Authors: PARRAGA CA TOLHURST DJ LEE JTC
Citation: Ca. Parraga et al., DISCRIMINATION OF CHANGES IN THE SLOPE OF THE AMPLITUDE SPECTRA OF COMPLEX VISUAL IMAGES BY HUMAN OBSERVERS MAY REQUIRE COMPARISON OF CONTRAST BETWEEN DIFFERENT SPATIAL-FREQUENCY BANDS, Journal of physiology, 506P, 1998, pp. 86-86
MULTIWAVELENGTH ELLIPSOMETRY FOR REAL-TIME PROCESS-CONTROL OF THE PLASMA-ETCHING OF PATTERNED SAMPLES
Authors: MAYNARD HL LAYADI N LEE JTC
Citation: Hl. Maynard et al., MULTIWAVELENGTH ELLIPSOMETRY FOR REAL-TIME PROCESS-CONTROL OF THE PLASMA-ETCHING OF PATTERNED SAMPLES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 109-115
CL-2 PLASMA-ETCHING OF SI(100) - DAMAGED SURFACE-LAYER STUDIED BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY
Authors: LAYADI N DONNELLY VM LEE JTC KLEMENS FP
Citation: N. Layadi et al., CL-2 PLASMA-ETCHING OF SI(100) - DAMAGED SURFACE-LAYER STUDIED BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 604-609
CL-2 PLASMA-ETCHING OF SI(100) - NATURE OF THE CHLORINATED SURFACE-LAYER STUDIED BY ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY
Authors: LAYADI N DONNELLY VM LEE JTC
Citation: N. Layadi et al., CL-2 PLASMA-ETCHING OF SI(100) - NATURE OF THE CHLORINATED SURFACE-LAYER STUDIED BY ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal of applied physics, 81(10), 1997, pp. 6738-6748
PLASMA-ETCHING PROCESS-DEVELOPMENT USING IN-SITU OPTICAL-EMISSION ANDELLIPSOMETRY
Authors: LEE JTC BLAYO N TEPERMEISTER I KLEMENS FP MANSFIELD WM IBBOTSON DE
Citation: Jtc. Lee et al., PLASMA-ETCHING PROCESS-DEVELOPMENT USING IN-SITU OPTICAL-EMISSION ANDELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3283-3290
COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .5. POLYSILICON ETCHING RATE, UNIFORMITY, PROFILE CONTROL, AND BULK PLASMA PROPERTIES IN A HELICAL RESONATOR PLASMA SOURCE
Authors: LEE JTC LAYADI N GUINN KV MAYNARD HL KLEMENS FP IBBOTSON DE TEPERMEISTER I EGAN PO RICHARDSON RA
Citation: Jtc. Lee et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .5. POLYSILICON ETCHING RATE, UNIFORMITY, PROFILE CONTROL, AND BULK PLASMA PROPERTIES IN A HELICAL RESONATOR PLASMA SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2510-2518
METAL STACK ETCHING USING A HELICAL RESONATOR PLASMA
Authors: LABELLE CB MAYNARD HL LEE JTC
Citation: Cb. Labelle et al., METAL STACK ETCHING USING A HELICAL RESONATOR PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2574-2581
A COMPARISON OF HDP SOURCES FOR POLYSILICON ETCHING
Authors: LEE JTC
Citation: Jtc. Lee, A COMPARISON OF HDP SOURCES FOR POLYSILICON ETCHING, Solid state technology, 39(8), 1996, pp. 63
PLASMA-ETCHING ENDPOINTING BY MONITORING RADIOFREQUENCY POWER-SYSTEMSWITH AN ARTIFICIAL NEURAL-NETWORK
Authors: MAYNARD HL RIETMAN EA LEE JTC IBBOTSON DE
Citation: Hl. Maynard et al., PLASMA-ETCHING ENDPOINTING BY MONITORING RADIOFREQUENCY POWER-SYSTEMSWITH AN ARTIFICIAL NEURAL-NETWORK, Journal of the Electrochemical Society, 143(6), 1996, pp. 2029-2035
ULTRAVIOLET-VISIBLE ELLIPSOMETRY FOR PROCESS-CONTROL DURING THE ETCHING OF SUBMICROMETER FEATURES
Authors: BLAYO N CIRELLI RA KLEMENS FP LEE JTC
Citation: N. Blayo et al., ULTRAVIOLET-VISIBLE ELLIPSOMETRY FOR PROCESS-CONTROL DURING THE ETCHING OF SUBMICROMETER FEATURES, Journal of the Optical Society of America. A, Optics, image science,and vision., 12(3), 1995, pp. 591-599
PLASMA-POLYMERIZED ALL-DRY RESIST PROCESS FOR 0.25 MU-M PHOTOLITHOGRAPHY
Authors: JOUBERT O WEIDMAN T JOSHI A CIRELLI R STEIN S LEE JTC VAIDYA S
Citation: O. Joubert et al., PLASMA-POLYMERIZED ALL-DRY RESIST PROCESS FOR 0.25 MU-M PHOTOLITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3909-3913
COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .1. ETCHING RATE, UNIFORMITY, AND PROFILE CONTROL IN A HELICON AND A MULTIPLE ELECTRON-CYCLOTRON-RESONANCE SOURCE
Authors: TEPERMEISTER I BLAYO N KLEMENS FP IBBOTSON DE GOTTSCHO RA LEE JTC SAWIN HH
Citation: I. Tepermeister et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .1. ETCHING RATE, UNIFORMITY, AND PROFILE CONTROL IN A HELICON AND A MULTIPLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2310-2321
COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .2. LANGMUIR PROBE STUDIES OF A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE
Authors: TEPERMEISTER I IBBOTSON DE LEE JTC SAWIN HH
Citation: I. Tepermeister et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .2. LANGMUIR PROBE STUDIES OF A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2322-2332
COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .3. ION ENERGY-DISTRIBUTION FUNCTIONS FOR A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE
Authors: GIBSON GW SAWIN HH TEPERMEISTER I IBBOTSON DE LEE JTC
Citation: Gw. Gibson et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .3. ION ENERGY-DISTRIBUTION FUNCTIONS FOR A HELICON AND A MULTIPOLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2333-2341
10TH-MICRON POLYSILICON THIN-FILM TRANSISTORS
Authors: WATTS RK LEE JTC
Citation: Rk. Watts et Jtc. Lee, 10TH-MICRON POLYSILICON THIN-FILM TRANSISTORS, IEEE electron device letters, 14(11), 1993, pp. 515-517
Risultati: 1-22 |