Authors: LOSURDO M CAPEZZUTO P BRUNO G LEFEBVRE PR IRENE EA

Citation: M. Losurdo et al., STUDY OF THE MECHANISMS OF GAN FILM GROWTH ON GAAS-SURFACES BY THERMAL AND PLASMA NITRIDATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2665-2671

Authors: LEFEBVRE PR LAI L IRENE EA

Citation: Pr. Lefebvre et al., COMPARISON OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF THERMAL AND PLASMA GROWN OXIDES ON GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 996-1001

Authors: ZHAO C LEFEBVRE PR IRENE EA

Citation: C. Zhao et al., SPECTROSCOPIC IMMERSION ELLIPSOMETRY STUDY OF SIO2-SI INTERFACE ROUGHNESS FOR ELECTRON-CYCLOTRON-RESONANCE PLASMA AND THERMALLY OXIDIZED SISURFACES, Thin solid films, 313, 1998, pp. 286-291

Authors: LEFEBVRE PR ZHAO C IRENE EA

Citation: Pr. Lefebvre et al., AN IN-SITU AND EX-SITU ELLIPSOMETRY COMPARISON OF THE INTERFACES OF SI AND GAAS RESULTING FROM THERMAL AND PLASMA OXIDATION, Thin solid films, 313, 1998, pp. 454-458

Authors: LEFEBVRE PR IRENE EA

Citation: Pr. Lefebvre et Ea. Irene, COMPARISON OF SI AND GAAS INTERFACES RESULTING FROM THERMAL AND PLASMA OXIDATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1173-1181