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Citation: Mlf. Lerch et al., CHARGE ACCUMULATION OVER A REGION OF ELECTRICAL MULTISTABILITY IN A DOUBLE-BARRIER STRUCTURE, Surface science, 362(1-3), 1996, pp. 226-230

Authors: FISHER DJ ZHANG C STEWART SM XU W LERCH MLF MARTIN AD EAVES L

Citation: Dj. Fisher et al., EFFECT OF FREQUENCY-DEPENDENT ELECTRON-ELECTRON INTERACTION ON RESONANT-TUNNELING, Superlattices and microstructures, 18(3), 1995, pp. 239-248

Authors: LERCH MLF MARTIN AD SIMMONDS PE EAVES L LEADBEATER ML

Citation: Mlf. Lerch et al., A NEW TECHNIQUE FOR DIRECTLY PROBING THE INTRINSIC TRISTABILITY AN DITS TEMPERATURE-DEPENDENCE IN A RESONANT-TUNNELING DIODE, Solid-state electronics, 37(4-6), 1994, pp. 961-964

Authors: ZHANG C LERCH MLF MARTIN AD SIMMONDS PE EAVES L

Citation: C. Zhang et al., PLASMON ASSISTED RESONANT-TUNNELING IN A DOUBLE-BARRIER HETEROSTRUCTURE, Physical review letters, 72(21), 1994, pp. 3397-3400

Authors: MARTIN AD LERCH MLF SIMMONDS PE EAVES L

Citation: Ad. Martin et al., OBSERVATION OF INTRINSIC TRISTABILITY IN A RESONANT-TUNNELING STRUCTURE, Applied physics letters, 64(10), 1994, pp. 1248-1250