AAAAAA

   
Results: 1-5 |
Results: 5

Authors: SOUIFI A DEBARROS O BREMOND G LETRON B MOUIS M VINCENT G ASHBURN P
Citation: A. Souifi et al., INVESTIGATION OF PROCESS-INDUCED DEFECTS IN SIGE SI HETEROJUNCTION BIPOLAR-TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1745-1749

Authors: DEBARROS O SOUIFI A LETRON B VINCENT G BREMOND G
Citation: O. Debarros et al., CHARACTERIZATION OF SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Thin solid films, 294(1-2), 1997, pp. 271-273

Authors: LETRON B HASHIM MDR ASHBURN P MOUIS M CHANTRE A VINCENT G
Citation: B. Letron et al., DETERMINATION OF BANDGAP NARROWING AND PARASITIC ENERGY BARRIERS IN SIGE HBTS INTEGRATED IN A BIPOLAR TECHNOLOGY, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 715-722

Authors: DEBARROS O LETRON B WOODS RC GIROULTMATLAKOWSKI G VINCENT G BREMOND G
Citation: O. Debarros et al., ELECTRICAL CHARACTERIZATION OF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS AND SI PSEUDO-HBTS, Applied surface science, 102, 1996, pp. 212-216

Authors: GIROULTMATLAKOWSKI G BOUSSETA H LETRON B DUTARTRE D WARREN P BOUZID MJ NOUAILHAT A ASHBURN P CHANTRE A
Citation: G. Giroultmatlakowski et al., LOW-TEMPERATURE PERFORMANCE OF SELF-ALIGNED ETCHED POLYSILICON EMITTER PSEUDOHETEROJUNCTION BIPOLAR-TRANSISTORS, Journal de physique. IV, 4(C6), 1994, pp. 111-115
Risultati: 1-5 |