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Results: 1-9 |
Results: 9
THE HYDROGEN REDUCTION OF WF6 - A KINETIC-STUDY BASED ON IN-SITU PARTIAL-PRESSURE MEASUREMENTS
Authors: OOSTERLAKEN TGM LEUSINK GJ JANSSEN GCAM RADELAAR S
Citation: Tgm. Oosterlaken et al., THE HYDROGEN REDUCTION OF WF6 - A KINETIC-STUDY BASED ON IN-SITU PARTIAL-PRESSURE MEASUREMENTS, Journal of the Electrochemical Society, 143(5), 1996, pp. 1668-1675
INFLUENCE OF MIXED REDUCTANTS ON THE GROWTH-RATE OF WF6-BASED W-CVD
Authors: JONGSTE JF OOSTERLAKEN TGM LEUSINK GJ VANDERJEUGD CA JANSSEN GCAM RADELAAR S
Citation: Jf. Jongste et al., INFLUENCE OF MIXED REDUCTANTS ON THE GROWTH-RATE OF WF6-BASED W-CVD, Applied surface science, 91(1-4), 1995, pp. 162-168
STRESS IN AL, ALSICU, AND ALVPD FILMS ON OXIDIZED SI SUBSTRATES
Authors: LEUSINK GJ LOKKER JP VANDENHOMBERG MJC JONGSTE JF OOSTERLAKEN TGM JANSSEN GCAM RADELAAR S
Citation: Gj. Leusink et al., STRESS IN AL, ALSICU, AND ALVPD FILMS ON OXIDIZED SI SUBSTRATES, Applied surface science, 91(1-4), 1995, pp. 215-219
THE EFFECT OF DOPING ATOMS ON THE KINETICS OF SELF-LIMITING TUNGSTEN FILM GROWTH ON SILICON BY REDUCTION OF TUNGSTEN HEXAFLUORIDE
Authors: VANDERJEUGD CA LEUSINK GJ OOSTERLAKEN TGM JONGSTE JF JANSSEN GCAM RADELAAR S
Citation: Ca. Vanderjeugd et al., THE EFFECT OF DOPING ATOMS ON THE KINETICS OF SELF-LIMITING TUNGSTEN FILM GROWTH ON SILICON BY REDUCTION OF TUNGSTEN HEXAFLUORIDE, Journal of the Electrochemical Society, 142(4), 1995, pp. 1326-1332
INFLUENCE OF TEMPERATURE-GRADIENTS ON PARTIAL PRESSURES IN A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR
Authors: OOSTERLAKEN TGM LEUSINK GJ JANSSEN GCAM RADELAAR S KUIJLAARS KJ KLEIJN CR VANDENAKKER HEA
Citation: Tgm. Oosterlaken et al., INFLUENCE OF TEMPERATURE-GRADIENTS ON PARTIAL PRESSURES IN A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of applied physics, 76(5), 1994, pp. 3130-3139
RESISTIVITY AND SUPERCONDUCTING TRANSITION-TEMPERATURE OF VERY THIN AMORPHOUS TUNGSTEN GERMANIUM FILMS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION
Authors: OOSTERLAKEN TGM LEUSINK GJ KUIPER GJ BAKKER SJM VERBRUGGEN AH JAEGER HM JANSSEN GCAM RADELAAR S
Citation: Tgm. Oosterlaken et al., RESISTIVITY AND SUPERCONDUCTING TRANSITION-TEMPERATURE OF VERY THIN AMORPHOUS TUNGSTEN GERMANIUM FILMS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION, Physica. C, Superconductivity, 214(3-4), 1993, pp. 359-364
STEP COVERAGE OF TUNGSTEN FILMS DEPOSITED BY GERMANE REDUCTION OF WF6
Authors: OOSTERLAKEN TGM LEUSINK GJ JANSSEN GCAM RADELAAR S
Citation: Tgm. Oosterlaken et al., STEP COVERAGE OF TUNGSTEN FILMS DEPOSITED BY GERMANE REDUCTION OF WF6, Applied surface science, 73, 1993, pp. 64-70
CHEMICAL-VAPOR-DEPOSITION TUNGSTEN FILM GROWTH STUDIED BY INSITU GROWTH STRESS MEASUREMENTS
Authors: LEUSINK GJ OOSTERLAKEN TGM JANSSEN GCAM RADELAAR S
Citation: Gj. Leusink et al., CHEMICAL-VAPOR-DEPOSITION TUNGSTEN FILM GROWTH STUDIED BY INSITU GROWTH STRESS MEASUREMENTS, Thin solid films, 228(1-2), 1993, pp. 125-128
THE EVOLUTION OF GROWTH STRESSES IN CHEMICAL-VAPOR-DEPOSITED TUNGSTENFILMS STUDIED BY IN-SITU WAFER CURVATURE MEASUREMENTS
Authors: LEUSINK GJ OOSTERLAKEN TGM JANSSEN GCAM RADELAAR S
Citation: Gj. Leusink et al., THE EVOLUTION OF GROWTH STRESSES IN CHEMICAL-VAPOR-DEPOSITED TUNGSTENFILMS STUDIED BY IN-SITU WAFER CURVATURE MEASUREMENTS, Journal of applied physics, 74(6), 1993, pp. 3899-3910
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