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Results: 1-25 | 26-34 |
Results: 26-34/34
SUPERCONDUCTIVITY OF 22-K AND 10K IN THE QUATERNARY BOROCARBIDES RPD4BCX (R=Y, LU)
Authors: HOSSAIN Z GUPTA LC MAZUMDAR C NAGARAJAN R DHAR SK GODART C LEVYCLEMENT C PADALIA BD VIJAYARAGHAVAN R
Citation: Z. Hossain et al., SUPERCONDUCTIVITY OF 22-K AND 10K IN THE QUATERNARY BOROCARBIDES RPD4BCX (R=Y, LU), Solid state communications, 92(4), 1994, pp. 341-344
FAST ANNEALING OF II-VI COMPOUNDS BY PULSED-LASER IRRADIATION
Authors: NEUMANNSPALLART M LEVYCLEMENT C GRABNER G
Citation: M. Neumannspallart et al., FAST ANNEALING OF II-VI COMPOUNDS BY PULSED-LASER IRRADIATION, Journal of physics. D, Applied physics, 27(2), 1994, pp. 407-413
IMPEDANCE OF POROUS SI
Authors: SHEN WM TOMKIEWICZ M LEVYCLEMENT C
Citation: Wm. Shen et al., IMPEDANCE OF POROUS SI, Journal of applied physics, 76(6), 1994, pp. 3635-3639
MORPHOLOGY OF POROUS N-TYPE SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING .1. CORRELATIONS WITH MATERIAL AND ETCHING PARAMETERS
Authors: LEVYCLEMENT C LAGOUBI A TOMKIEWICZ M
Citation: C. Levyclement et al., MORPHOLOGY OF POROUS N-TYPE SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING .1. CORRELATIONS WITH MATERIAL AND ETCHING PARAMETERS, Journal of the Electrochemical Society, 141(4), 1994, pp. 958-967
SUPERCONDUCTIVITY AT 12-K IN Y-NI-B SYSTEM
Authors: MAZUMDAR C NAGARAJAN R GODART C GUPTA LC LATROCHE M DHAR SK LEVYCLEMENT C PADALIA BD VIJAYARAGHAVAN R
Citation: C. Mazumdar et al., SUPERCONDUCTIVITY AT 12-K IN Y-NI-B SYSTEM, Solid state communications, 87(5), 1993, pp. 413-416
MORPHOLOGY OF POROUS N-TYPE SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING .2. STUDY OF THE TANGLED SI WIRES IN THE NANOPOROUS LAYER
Authors: ALBUYARON A BASTIDE S MAURICE JL LEVYCLEMENT C
Citation: A. Albuyaron et al., MORPHOLOGY OF POROUS N-TYPE SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING .2. STUDY OF THE TANGLED SI WIRES IN THE NANOPOROUS LAYER, Journal of luminescence, 57(1-6), 1993, pp. 67-71
ROOM-TEMPERATURE PHOTOLUMINESCENCE OF PHOTOELECTROCHEMICALLY ETCHED N-TYPE SI
Authors: GALUN E TENNE R LAGOUBI A LEVYCLEMENT C
Citation: E. Galun et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE OF PHOTOELECTROCHEMICALLY ETCHED N-TYPE SI, Journal of luminescence, 57(1-6), 1993, pp. 125-129
ABSORPTION TAIL OF LOW-RESISTIVITY CDSEXTE1-X - COMPARISON BETWEEN ABSORPTION AND QUANTUM EFFICIENCY MEASUREMENTS
Authors: NEUMANNSPALLART M GALUN E HODES G LEVYCLEMENT C MARFAING Y MURANEVICH E TENNE R
Citation: M. Neumannspallart et al., ABSORPTION TAIL OF LOW-RESISTIVITY CDSEXTE1-X - COMPARISON BETWEEN ABSORPTION AND QUANTUM EFFICIENCY MEASUREMENTS, Journal of applied physics, 73(11), 1993, pp. 7753-7759
PHOTOELECTROCHEMICAL ETCHING OF SILICON
Authors: LEVYCLEMENT C LAGOUBI A TENNE R NEUMANNSPALLART M
Citation: C. Levyclement et al., PHOTOELECTROCHEMICAL ETCHING OF SILICON, Electrochimica acta, 37(5), 1992, pp. 877-888
Risultati: 1-25 | 26-34 |