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Authors: YOFFE GW VANDERVLEUTEN WC LEYS MR KAROUTA F WOLTER JH
Citation: Gw. Yoffe et al., VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH PERIODIC GAIN AND ALUMINUM TOP CONTACTS, Electronics Letters, 30(10), 1994, pp. 794-795

Authors: RAGAY FW LEYS MR WOLTER JH
Citation: Fw. Ragay et al., APPLICATION OF DELTA-DOPING IN GAAS TUNNEL-JUNCTIONS, Electronics Letters, 30(1), 1994, pp. 86-87

Authors: REN L LEYS MR
Citation: L. Ren et Mr. Leys, 1 F NOISE IN AN ALXGA1-XAS/GAAS HETEROSTRUCTURE BETWEEN 77-K AND 300-K/, Physica. B, Condensed matter, 192(4), 1993, pp. 303-310

Authors: RAGAY FW LEYS MR WOLTER JH
Citation: Fw. Ragay et al., ALUMINUM LAYERS AS NONALLOYED CONTACTS TO P-TYPE GAAS, Applied physics letters, 63(9), 1993, pp. 1234-1236

Authors: LENSSEN KMH MATTERS M HARMANS CJPM MOOIJ JE LEYS MR VANDERVLEUTEN W WOLTER JH
Citation: Kmh. Lenssen et al., ANDREEV REFLECTION AT SUPERCONDUCTING CONTACTS TO GAAS ALGAAS HETEROSTRUCTURES/, Applied physics letters, 63(15), 1993, pp. 2079-2081

Authors: HENNING JCM KESSENER YARR KOENRAAD PM LEYS MR VANDERVLEUTEN W WOLTER JH FRENS AM
Citation: Jcm. Henning et al., PHOTOLUMINESCENCE STUDY OF SI DELTA-DOPED GAAS, Semiconductor science and technology, 6(11), 1991, pp. 1079-1087

Authors: KOENRAAD PM DELANGE W BLOM FAP LEYS MR PERENBOOM JAAJ SINGLETON J WOLTER JH
Citation: Pm. Koenraad et al., SHIFT OF THE DX LEVEL IN NARROW SI DELTA-DOPED GAAS, Semiconductor science and technology, 6(10B), 1991, pp. 143-145
Risultati: 1-25 | 26-32 |