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Results: 1-10 |
Results: 10
FABRICATION OF A NOVEL OXYGEN SENSOR WITH CMOS COMPATIBLE PROCESSES
Authors: ZHU HX LO TC LENIGK R RENNEBERG R
Citation: Hx. Zhu et al., FABRICATION OF A NOVEL OXYGEN SENSOR WITH CMOS COMPATIBLE PROCESSES, Sensors and actuators. B, Chemical, 46(2), 1998, pp. 155-159
THE EFFECT OF THE NASOPHARYNGEAL AIR CAVITY ON X-RAY INTERFACE DOSES
Authors: KAN WK WU PM LEUNG HT LO TC CHUNG CW KWONG DLW SHAM ST
Citation: Wk. Kan et al., THE EFFECT OF THE NASOPHARYNGEAL AIR CAVITY ON X-RAY INTERFACE DOSES, Physics in medicine and biology, 43(3), 1998, pp. 529-537
CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY STUDY OF SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURE GROWN BY ULTRA-HIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION/
Authors: ZHANG JS JIN XJ TSIEN PH LO TC
Citation: Js. Zhang et al., CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY STUDY OF SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURE GROWN BY ULTRA-HIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 2, 36(7B), 1997, pp. 903-905
WHOQOL - THE DEVELOPMENT OF NATIONAL QUESTIONS FOR HONG-KONG
Authors: FUNG KFLH LEUNG KF SHUM PS AU KS CHAN SP TAY M CHAN CH CHIN PH FONG D WONG A CHENG S LO TC CHAN LW LEUNG SF CHU M LI H KO F CHU M WONG S CHENG S LAU J LEE SW CHAN KS
Citation: Kflh. Fung et al., WHOQOL - THE DEVELOPMENT OF NATIONAL QUESTIONS FOR HONG-KONG, Quality of life research, 6(5), 1997, pp. 144-144
REACTION-MECHANISM OF SELECTIVE PLATING BETWEEN TIW AND AU-AN INNOVATIVE METALLIZATION SCHEME FOR HIGH-SPEED ELECTRONICS
Authors: LO TC CHAN MY
Citation: Tc. Lo et My. Chan, REACTION-MECHANISM OF SELECTIVE PLATING BETWEEN TIW AND AU-AN INNOVATIVE METALLIZATION SCHEME FOR HIGH-SPEED ELECTRONICS, JPN J A P 1, 35(12A), 1996, pp. 6344-6345
OPTIMIZATION OF A NOVEL SELF-PLANARIZING AU METALLIZATION PROCESS FORPRACTICAL VLSI APPLICATIONS
Authors: LO TC CHAN MY
Citation: Tc. Lo et My. Chan, OPTIMIZATION OF A NOVEL SELF-PLANARIZING AU METALLIZATION PROCESS FORPRACTICAL VLSI APPLICATIONS, JPN J A P 1, 35(11), 1996, pp. 5674-5679
SELECTIVE ELECTROPLATING BETWEEN METAL AND SEMICONDUCTOR ELECTRODES
Authors: LO TC CHAN MY
Citation: Tc. Lo et My. Chan, SELECTIVE ELECTROPLATING BETWEEN METAL AND SEMICONDUCTOR ELECTRODES, Journal of the Electrochemical Society, 143(11), 1996, pp. 3517-3521
DOWNSIZING GOLD WIRES TO SUBMICRON RANGE - A SELF-PLANARIZED AU METALLIZATION PROCESS BY SELECTIVE ELECTROPLATING FOR SI LSI APPLICATIONS
Authors: LO TC CHAN MY
Citation: Tc. Lo et My. Chan, DOWNSIZING GOLD WIRES TO SUBMICRON RANGE - A SELF-PLANARIZED AU METALLIZATION PROCESS BY SELECTIVE ELECTROPLATING FOR SI LSI APPLICATIONS, JPN J A P 2, 34(7B), 1995, pp. 945-947
SIMULATION AND ANALYSIS OF SILICON ELECTROOPTIC MODULATORS UTILIZING THE CARRIER-DISPERSION EFFECT AND IMPACT-IONIZATION MECHANISM
Authors: HUANG HC LO TC
Citation: Hc. Huang et Tc. Lo, SIMULATION AND ANALYSIS OF SILICON ELECTROOPTIC MODULATORS UTILIZING THE CARRIER-DISPERSION EFFECT AND IMPACT-IONIZATION MECHANISM, Journal of applied physics, 74(3), 1993, pp. 1521-1528
ANISOTROPIC ETCHING OF DEEP TRENCH FOR SILICON MONOLITHIC MICROWAVE INTEGRATED-CIRCUIT
Authors: LO TC HUANG HC
Citation: Tc. Lo et Hc. Huang, ANISOTROPIC ETCHING OF DEEP TRENCH FOR SILICON MONOLITHIC MICROWAVE INTEGRATED-CIRCUIT, Electronics Letters, 29(25), 1993, pp. 2202-2203
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