Authors: LOPES MCV DOSSANTOS SG HASENACK CM BARANAUSKAS V

Citation: Mcv. Lopes et al., SI-SIO2 ELECTRONIC INTERFACE ROUGHNESS AS A CONSEQUENCE OF SI-SIO2 TOPOGRAPHIC INTERFACE ROUGHNESS, Journal of the Electrochemical Society, 143(3), 1996, pp. 1021-1025

Authors: DOSSANTOS SG HASENACK CM LOPES MCV BARANAUSKAS V

Citation: Sg. Dossantos et al., RAPID THERMAL-OXIDATION OF SILICON WITH DIFFERENT THERMAL ANNEALING CYCLES IN NITROGEN - INFLUENCE ON SURFACE MICROROUGHNESS AND ELECTRICALCHARACTERISTICS, Semiconductor science and technology, 10(7), 1995, pp. 990-996

Authors: LOPES MCV HASENACK CM BARANAUSKAS V

Citation: Mcv. Lopes et al., NUMERICAL-CALCULATIONS OF THE ELECTRICAL EFFECTS INDUCED BY STRUCTURAL IMPERFECTIONS ON MOS CAPACITORS, Journal of the Electrochemical Society, 141(6), 1994, pp. 1621-1628