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Results: 1-11 |
Results: 11
FORMATION OF A SCHOTTKY-BARRIER BETWEEN EUTECTIC GA,IN AND THIOPHENE OLIGOMERS
Authors: LOUS EJ BLOM PWM MOLENKAMP LW DELEEUW DM
Citation: Ej. Lous et al., FORMATION OF A SCHOTTKY-BARRIER BETWEEN EUTECTIC GA,IN AND THIOPHENE OLIGOMERS, Journal of applied physics, 81(8), 1997, pp. 3537-3542
ELECTRICAL CHARACTERIZATION OF GAP STATES IN A HIGHLY DOPED CONDUCTING OLIGOMER
Authors: LOUS EJ CREUSEN MP
Citation: Ej. Lous et Mp. Creusen, ELECTRICAL CHARACTERIZATION OF GAP STATES IN A HIGHLY DOPED CONDUCTING OLIGOMER, Synthetic metals, 76(1-3), 1996, pp. 233-236
TRIPLET-SINGLET DIFFERENCE SPECTRA OF RHODOPSEUDOMONAS-VIRIDIS RECORDED WITH MAGNETOOPTICAL DIFFERENCE SPECTROSCOPY AT 1.2-286 K - TEMPERATURE-DEPENDENCE OF POSITION AND WIDTH OF THE LONG-WAVELENGTH ABSORPTION-BAND
Authors: GAST P LOUS EJ HOFF AJ
Citation: P. Gast et al., TRIPLET-SINGLET DIFFERENCE SPECTRA OF RHODOPSEUDOMONAS-VIRIDIS RECORDED WITH MAGNETOOPTICAL DIFFERENCE SPECTROSCOPY AT 1.2-286 K - TEMPERATURE-DEPENDENCE OF POSITION AND WIDTH OF THE LONG-WAVELENGTH ABSORPTION-BAND, Chemical physics, 194(2-3), 1995, pp. 387-394
SCHOTTKY CONTACTS ON A HIGHLY DOPED ORGANIC SEMICONDUCTOR
Authors: LOUS EJ BLOM PWM MOLENKAMP LW DELEEUW DM
Citation: Ej. Lous et al., SCHOTTKY CONTACTS ON A HIGHLY DOPED ORGANIC SEMICONDUCTOR, Physical review. B, Condensed matter, 51(23), 1995, pp. 17251-17254
ORGANIC N-TYPE FIELD-EFFECT TRANSISTOR
Authors: BROWN AR DELEEUW DM LOUS EJ HAVINGA EE
Citation: Ar. Brown et al., ORGANIC N-TYPE FIELD-EFFECT TRANSISTOR, Synthetic metals, 66(3), 1994, pp. 257-261
ORGANIC N-TYPE FIELD-EFFECT TRANSISTOR
Authors: BROWN AR DELEEUW DM LOUS EJ HAVINGA EE
Citation: Ar. Brown et al., ORGANIC N-TYPE FIELD-EFFECT TRANSISTOR, Synthetic metals, 66(3), 1994, pp. 257-261
METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY-TYPE DIODES OF DOPED THIOPHENEOLIGOMERS
Authors: DELEEUW DM LOUS EJ
Citation: Dm. Deleeuw et Ej. Lous, METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY-TYPE DIODES OF DOPED THIOPHENEOLIGOMERS, Synthetic metals, 65(1), 1994, pp. 45-53
BEHAVIOR OF A RECTIFYING JUNCTION AT THE INTERFACE BETWEEN POROUS SILICON AND ITS SUBSTRATE
Authors: PULSFORD NJ RIKKEN GLJA KESSENER YARR LOUS EJ VENHUIZEN AHJ
Citation: Nj. Pulsford et al., BEHAVIOR OF A RECTIFYING JUNCTION AT THE INTERFACE BETWEEN POROUS SILICON AND ITS SUBSTRATE, Journal of applied physics, 75(1), 1994, pp. 636-638
CRYSTALLOGRAPHIC ANALYSES OF SITE-DIRECTED MUTANTS OF THE PHOTOSYNTHETIC REACTION-CENTER FROM RHODOBACTER-SPHAEROIDES
Authors: CHIRINO AJ LOUS EJ HUBER M ALLEN JP SCHENCK CC PADDOCK ML FEHER G REES DC
Citation: Aj. Chirino et al., CRYSTALLOGRAPHIC ANALYSES OF SITE-DIRECTED MUTANTS OF THE PHOTOSYNTHETIC REACTION-CENTER FROM RHODOBACTER-SPHAEROIDES, Biochemistry, 33(15), 1994, pp. 4584-4593
MAGNETIC-FIELD EFFECTS - MARY, MIMS AND MODS
Authors: HOFF AJ GAST P VANDERVOS R VRIEZE J FRANKEN EM LOUS EJ
Citation: Aj. Hoff et al., MAGNETIC-FIELD EFFECTS - MARY, MIMS AND MODS, Zeitschrift für physikalische Chemie, 180, 1993, pp. 175-192
CARRIER INJECTION AND TRANSPORT IN POROUS SILICON SCHOTTKY DIODES
Authors: PULSFORD NJ RIKKEN GLJA KESSENER YARR LOUS EJ VENHUIZEN AHJ
Citation: Nj. Pulsford et al., CARRIER INJECTION AND TRANSPORT IN POROUS SILICON SCHOTTKY DIODES, Journal of luminescence, 57(1-6), 1993, pp. 181-184
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