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Results: 1-7 |
Results: 7
Temperature-activated reactions of H2O and NH3 with H-passivated Si(111) surfaces
Authors: Zaibi, MA Sebenne, CA Lacharme, JP
Citation: Ma. Zaibi et al., Temperature-activated reactions of H2O and NH3 with H-passivated Si(111) surfaces, SURF REV L, 8(1-2), 2001, pp. 25-31
Thermal stability of a partly Fe-intercalated GaSe film
Authors: Zerrouki, M Lacharme, JP Ghamnia, M Sebenne, CA Abidri, B
Citation: M. Zerrouki et al., Thermal stability of a partly Fe-intercalated GaSe film, APPL SURF S, 181(1-2), 2001, pp. 160-165
Growth and morphology of cobalt nanoparticles on alumina
Authors: Dureuil, V Ricolleau, C Gandais, M Grigis, C Lacharme, JP Naudon, A
Citation: V. Dureuil et al., Growth and morphology of cobalt nanoparticles on alumina, J CRYST GR, 233(4), 2001, pp. 737-748
Study of Fe deposition upon a layered compound: GaSe
Authors: Zerrouki, M Lacharme, JP Ghamnia, M Sebenne, CA Eddrief, M Abidri, B
Citation: M. Zerrouki et al., Study of Fe deposition upon a layered compound: GaSe, APPL SURF S, 166(1-4), 2000, pp. 143-148
Effect of Cu on InSe/Si(111) heterojunctions
Authors: Abidri, B Lacharme, JP Ghamnia, M Sebenne, CA Zerrouki, M
Citation: B. Abidri et al., Effect of Cu on InSe/Si(111) heterojunctions, EPJ-APPL PH, 8(2), 1999, pp. 153-158
Effect of Cu deposition and annealing upon a GaSe/Si(111) heterojunction
Authors: Abidri, B Lacharme, JP Ghamnia, M Sebenne, CA Eddrief, M Zerrouki, M
Citation: B. Abidri et al., Effect of Cu deposition and annealing upon a GaSe/Si(111) heterojunction, SURF REV L, 6(6), 1999, pp. 1173-1178
Compositional and electronic properties of Si(001)2 x 1 upon diatomic sulfur interaction
Authors: Lacharme, JP Benazzi, N Sebenne, CA
Citation: Jp. Lacharme et al., Compositional and electronic properties of Si(001)2 x 1 upon diatomic sulfur interaction, SURF SCI, 435, 1999, pp. 415-419
Risultati: 1-7 |