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Results: 1-3 |
Results: 3
The observation of negative transconductance effect caused by real-space-transfer of electrons in metal oxide semiconductor field effect transistors fabricated with Ta2O5 gate dielectric
Authors: Lai, BCM Lee, JYM
Citation: Bcm. Lai et Jym. Lee, The observation of negative transconductance effect caused by real-space-transfer of electrons in metal oxide semiconductor field effect transistors fabricated with Ta2O5 gate dielectric, IEEE ELEC D, 22(3), 2001, pp. 142-144
A study on the capacitance-voltage characteristics of metal-Ta2O5-silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications
Authors: Lai, BCM Kung, NH Lee, JYM
Citation: Bcm. Lai et al., A study on the capacitance-voltage characteristics of metal-Ta2O5-silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications, J APPL PHYS, 85(8), 1999, pp. 4087-4090
Leakage current mechanism of metal-Ta2O5-metal capacitors for memory device applications
Authors: Lai, BCM Lee, JYM
Citation: Bcm. Lai et Jym. Lee, Leakage current mechanism of metal-Ta2O5-metal capacitors for memory device applications, J ELCHEM SO, 146(1), 1999, pp. 266-269
Risultati: 1-3 |