AAAAAA
Results:
1-7
|
Results: 7
Authors:
Min, K
Lamb, HH
Hauser, JR
Citation: K. Min et al., Time-dependent Si etch behavior and its effect on oxide/Si selectivity in CF4+D-2 electron cyclotron resonance plasma etching, J VAC SCI B, 19(3), 2001, pp. 695-700
Authors:
McGinnis, AJ
Thomson, D
Davis, RF
Chen, E
Michel, A
Lamb, HH
Citation: Aj. Mcginnis et al., Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams, SURF SCI, 494(1), 2001, pp. 28-42
Authors:
McGinnis, AJ
Thomson, D
Davis, RF
Chen, E
Michel, A
Lamb, HH
Citation: Aj. Mcginnis et al., In situ cleaning of GaN/6H-SiC substrates in NH3, J CRYST GR, 222(3), 2001, pp. 452-458
Authors:
Khandelwal, A
Smith, BC
Lamb, HH
Citation: A. Khandelwal et al., Nitrogen incorporation in ultrathin gate dielectrics: A comparison of He/N2O and He/N-2 remote plasma processes, J APPL PHYS, 90(6), 2001, pp. 3100-3108
Authors:
Smith, BC
Khandelwal, A
Lamb, HH
Citation: Bc. Smith et al., Ar/N2O remote plasma-assisted oxidation of Si(100): Plasma chemistry, growth kinetics, and interfacial reactions, J VAC SCI B, 18(3), 2000, pp. 1757-1763
Authors:
Lai, KK
Lamb, HH
Citation: Kk. Lai et Hh. Lamb, Tungsten chemical vapor deposition using tungsten hexacarbonyl: microstructure of as-deposited and annealed films, THIN SOL FI, 370(1-2), 2000, pp. 114-121
Authors:
Reifsnyder, SN
Lamb, HH
Citation: Sn. Reifsnyder et Hh. Lamb, Characterization of silica-supported Pd-Au clusters by X-ray absorption spectroscopy, J PHYS CH B, 103(2), 1999, pp. 321-329
Risultati:
1-7
|