AAAAAA

   
Results: 1-9 |
Results: 9
Imaging of the lateral GOI-defect distribution in silicon MOS wafers with lock-in IR-thermography
Authors: Huth, S Breitenstein, O Lambert, U Huber, A
Citation: S. Huth et al., Imaging of the lateral GOI-defect distribution in silicon MOS wafers with lock-in IR-thermography, MAT SC S PR, 4(1-3), 2001, pp. 39-42
Localization and detailed investigation of gate oxide integrity defects insilicon MOS structures
Authors: Huth, S Breitenstein, O Huber, A Dantz, D Lambert, U
Citation: S. Huth et al., Localization and detailed investigation of gate oxide integrity defects insilicon MOS structures, MICROEL ENG, 59(1-4), 2001, pp. 109-113
Upper yield point of large diameter silicon
Authors: Fischer, A Richter, H Shalynin, A Krottenthaler, P Obermeier, G Lambert, U Wahlich, R
Citation: A. Fischer et al., Upper yield point of large diameter silicon, MICROEL ENG, 56(1-2), 2001, pp. 117-122
Can Si(113) wafers be an alternative to Si(001)?
Authors: Mussig, HJ Dabrowski, J Ehwald, KE Gaworzewski, P Huber, A Lambert, U
Citation: Hj. Mussig et al., Can Si(113) wafers be an alternative to Si(001)?, MICROEL ENG, 56(1-2), 2001, pp. 195-203
Localization of gate oxide integrity defects in silicon metal-oxide-semiconductor structures with lock-in IR thermography
Authors: Huth, S Breitenstein, O Huber, A Lambert, U
Citation: S. Huth et al., Localization of gate oxide integrity defects in silicon metal-oxide-semiconductor structures with lock-in IR thermography, J APPL PHYS, 88(7), 2000, pp. 4000-4003
Dependence of gate oxide integrity on grown-in defect density in Czochralski grown silicon
Authors: Lambert, U Huber, A Grabmeier, J Obermeier, G Vanhellemont, J Wahlich, R Kissinger, G
Citation: U. Lambert et al., Dependence of gate oxide integrity on grown-in defect density in Czochralski grown silicon, MICROEL ENG, 48(1-4), 1999, pp. 127-130
Challenges for economical growth of high quality 300 mm CZ Si crystals
Authors: Tomzig, E von Ammon, W Dornberger, E Lambert, U Zulehner, W
Citation: E. Tomzig et al., Challenges for economical growth of high quality 300 mm CZ Si crystals, MICROEL ENG, 45(2-3), 1999, pp. 113-125
Uniform precipitation of oxygen in large diameter wafers
Authors: Kissinger, G Vanhellemont, J Lambert, U Graf, D Richter, H
Citation: G. Kissinger et al., Uniform precipitation of oxygen in large diameter wafers, MICROEL ENG, 45(2-3), 1999, pp. 155-160
Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing
Authors: Kissinger, G Grabolla, T Morgenstern, G Richter, H Graf, D Vanhellemont, J Lambert, U von Ammon, W
Citation: G. Kissinger et al., Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing, J ELCHEM SO, 146(5), 1999, pp. 1971-1976
Risultati: 1-9 |