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Results:
1-8
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Results: 8
Authors:
Hicks, RF
Fu, Q
Li, L
Visbeck, SB
Sun, Y
Li, CH
Law, DC
Citation: Rf. Hicks et al., The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductors, J PHYS IV, 11(PR3), 2001, pp. 31-37
Authors:
Fu, Q
Begarney, MJ
Li, CH
Law, DC
Hicks, RF
Citation: Q. Fu et al., Phase transitions of III-V compound semiconductor surfaces in the MOVPE environment, J CRYST GR, 225(2-4), 2001, pp. 405-409
Authors:
Begarney, MJ
Li, CH
Law, DC
Visbeck, SB
Sun, Y
Hicks, RF
Citation: Mj. Begarney et al., Reflectance difference spectroscopy of mixed phases of indium phosphide (001), APPL PHYS L, 78(1), 2001, pp. 55-57
Authors:
Fu, Q
Li, L
Li, CH
Begarney, MJ
Law, DC
Hicks, RF
Citation: Q. Fu et al., Mechanism of arsine adsorption on the gallium-rich GaAs(001)-(4 x 2) surface, J PHYS CH B, 104(23), 2000, pp. 5595-5602
Authors:
Begarney, MJ
Li, L
Li, CH
Law, DC
Fu, Q
Hicks, RF
Citation: Mj. Begarney et al., Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide (001), PHYS REV B, 62(12), 2000, pp. 8092-8097
Authors:
Law, DC
Li, L
Begarney, MJ
Hicks, RF
Citation: Dc. Law et al., Analysis of the growth modes for gallium arsenide metalorganic vapor-phaseepitaxy, J APPL PHYS, 88(1), 2000, pp. 508-512
Authors:
Fu, Q
Li, L
Begarney, MJ
Han, BK
Law, DC
Hicks, RF
Citation: Q. Fu et al., Site-specific chemistry of gallium arsenide metalorganic chemical vapor deposition, J PHYS IV, 9(P8), 1999, pp. 3-14
Authors:
Begarney, MJ
Li, L
Han, BK
Law, DC
Li, CH
Yoon, H
Goorsky, MS
Hicks, RF
Citation: Mj. Begarney et al., Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy, J APPL PHYS, 86(1), 1999, pp. 318-324
Risultati:
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