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Results:
1-4
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Results: 4
Liquid phase epitaxial growth of 3C-SiC films deposited on Si
Authors:
Chen, ZM Ma, JP Lu, G Lei, TM Yu, MB Hang, LM Feng, XF
Citation:
Zm. Chen et al., Liquid phase epitaxial growth of 3C-SiC films deposited on Si, DIAM RELAT, 10(3-7), 2001, pp. 1255-1258
Raman analysis of a crystalline SiC sample prepared from carbon-saturated melt of silicon
Authors:
Ma, JP Chen, ZM Lu, G Hang, LM Feng, XF Lei, TM
Citation:
Jp. Ma et al., Raman analysis of a crystalline SiC sample prepared from carbon-saturated melt of silicon, CHIN PHYS L, 18(8), 2001, pp. 1123-1125
Epitaxial monocrystalline SiC films grown on Si by HFCVD at 780 degrees C
Authors:
Zhang, ZY Zhao, W Wang, XW Lei, TM Chen, ZM Zhou, SX
Citation:
Zy. Zhang et al., Epitaxial monocrystalline SiC films grown on Si by HFCVD at 780 degrees C, MAT SCI E B, 75(2-3), 2000, pp. 177-179
Photoluminescence of polycrystalline SiC sintered from graphite and Si melt
Authors:
Chen, ZM Ma, JP Wang, JN Lu, G Yu, MB Lei, TM Ge, WK
Citation:
Zm. Chen et al., Photoluminescence of polycrystalline SiC sintered from graphite and Si melt, CHIN PHYS L, 17(10), 2000, pp. 770-772
Risultati:
1-4
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