Authors:
Kachurin, GA
Leier, AF
Zhuravlev, KS
Tyschenko, IE
Gutakovskii, AK
Volodin, VA
Skorupa, W
Yankov, RA
Citation: Ga. Kachurin et al., Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions, SEMICONDUCT, 32(11), 1998, pp. 1222-1228