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Citation: Re. Leoni et al., A phenomenologically based transient SPICE model for digitally modulated RF performance characteristics of GaAs MESFETs, IEEE MICR T, 49(6), 2001, pp. 1180-1186

Authors: Chumbes, EM Schremer, AT Smart, JA Yang, Y MacDonald, NC Hogue, D Komiak, JJ Lichwalla, SJ Leoni, RE Shealy, JR

Citation: Em. Chumbes et al., AlGaN/GaN high electron mobility transistors on Si(111) substrates, IEEE DEVICE, 48(3), 2001, pp. 420-426

Authors: Shirokov, MS Leoni, RE Bao, JW Hwang, JCM

Citation: Ms. Shirokov et al., A transient SPICE model for digitally modulated RF characteristics of ion-implanted GaAs MESFET's, IEEE DEVICE, 47(8), 2000, pp. 1680-1681

Authors: Leoni, RE Bao, JW Bu, JK Du, XH Shirokov, MS Hwang, JCM

Citation: Re. Leoni et al., Mechanism for recoverable power drift in PHEMT's, IEEE DEVICE, 47(3), 2000, pp. 498-506

Authors: Whelan, CS Marsh, PF Hoke, WE McTaggart, RA Lyman, PS Lemonias, PJ Lardizabal, SM Leoni, RE Lichwala, SJ Kazior, TE

Citation: Cs. Whelan et al., Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates, IEEE J SOLI, 35(9), 2000, pp. 1307-1311

Authors: Leoni, RE Hwang, JCM

Citation: Re. Leoni et Jcm. Hwang, Mechanisms for output power expansion and degradation of PHEMT's during high-efficiency operation, IEEE DEVICE, 46(8), 1999, pp. 1608-1613