Authors:
Bonar, JM
Willoughby, AFW
Dan, AH
McGregor, BM
Lerch, W
Loeffelmacher, D
Cooke, GA
Dowsett, MG
Citation: Jm. Bonar et al., Antimony and boron diffusion in SiGe and Si under the influence of injected point defects, J MAT S-M E, 12(4-6), 2001, pp. 219-221
Authors:
Lerch, W
Gluck, M
Stolwijk, NA
Walk, H
Schafer, M
Marcus, SD
Downey, DF
Chow, JW
Citation: W. Lerch et al., Boron ultrashallow junction formation in silicon by low-energy implantation and rapid thermal annealing in inert and oxidizing ambient, J ELCHEM SO, 146(7), 1999, pp. 2670-2678
Authors:
Marcus, S
Lerch, W
Downey, DF
Todorov, S
Chow, C
Citation: S. Marcus et al., RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants, J ELEC MAT, 27(12), 1998, pp. 1291-1295