Citation: Lw. Lu et al., Study of GaN thin films grown on intermediate-temperature buffer layers bymolecular beam epitaxy, J CRYST GR, 234(1), 2002, pp. 99-104
Citation: Cf. Zhu et al., Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers, APPL PHYS A, 72(4), 2001, pp. 495-497
Citation: Wk. Fong et al., High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer, J CRYST GR, 233(3), 2001, pp. 431-438
Citation: Bh. Leung et al., Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers, IEEE DEVICE, 48(10), 2001, pp. 2400-2404
Authors:
Surya, C
Zhu, CF
Leung, BH
Fong, WK
Cheng, CC
Sin, JKO
Citation: C. Surya et al., Study of the effects of rapid thermal annealing in generation-recombination noise in MBE grown GaN thin films, MICROEL REL, 40(11), 2000, pp. 1905-1909
Citation: W. Yu et al., Distortion analysis of MOS track-and-hold sampling mixers using time-varying volterra series, IEEE CIR-II, 46(2), 1999, pp. 101-113
Citation: A. Namdar et Bh. Leung, A 400-MHz, 12-bit, 18-mW, IF digitizer with mixer inside a sigma-delta modulator loop, IEEE J SOLI, 34(12), 1999, pp. 1765-1776