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Results: 1
2D simulation of the effects of transient enhanced boron out-diffusion from base of SiGe HBT due to an extrinsic base implant
Authors:
Hashim, MR Lever, RF Ashburn, P
Citation:
Mr. Hashim et al., 2D simulation of the effects of transient enhanced boron out-diffusion from base of SiGe HBT due to an extrinsic base implant, SOL ST ELEC, 43(1), 1999, pp. 131-140
Risultati:
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