Authors: Liaw, HM Venugopal, R Wan, J Melloch, MR

Citation: Hm. Liaw et al., Epitaxial GaN films grown on Si(111) with varied buffer layers, SOL ST ELEC, 45(7), 2001, pp. 1173-1177

Authors: Liaw, HM Venugopal, R Wan, J Melloch, MR

Citation: Hm. Liaw et al., Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates, SOL ST ELEC, 45(3), 2001, pp. 417-421

Authors: Wan, J Venugopal, R Melloch, MR Liaw, HM Rummel, WJ

Citation: J. Wan et al., Growth of crack-free hexagonal GaN films on Si(100), APPL PHYS L, 79(10), 2001, pp. 1459-1461

Authors: Liaw, HM Venugopal, R Wan, J Doyle, R Fejes, PL Melloch, MR

Citation: Hm. Liaw et al., GaN epilayers grown on 100 mm diameter Si(111) substrates, SOL ST ELEC, 44(4), 2000, pp. 685-690

Authors: Liaw, HM Doyle, R Fejes, PL Zollner, S Konkar, A Linthicum, KJ Gehrke, T Davis, RF

Citation: Hm. Liaw et al., Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates, SOL ST ELEC, 44(4), 2000, pp. 747-755