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Results:
1-16
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Results: 16
Authors:
Oila, J
Ranki, V
Kivioja, J
Saarinen, K
Hautojarvi, P
Likonen, J
Baranowski, JM
Pakula, K
Suski, T
Leszczynski, M
Grzegory, I
Citation: J. Oila et al., Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers - art. no. 045205, PHYS REV B, 6304(4), 2001, pp. 5205
Authors:
Vainonen-Ahlgren, E
Ahlgren, T
Likonen, J
Lehto, S
Sajavaara, T
Rydman, W
Keinonen, J
Wu, CH
Citation: E. Vainonen-ahlgren et al., Deuterium diffusion in silicon-doped diamondlike carbon films - art. no. 045406, PHYS REV B, 6304(4), 2001, pp. 5406
Authors:
Vainonen-Ahlgren, E
Ahlgren, T
Khriachtchev, L
Likonen, J
Lehto, S
Keinonen, J
Wu, CH
Citation: E. Vainonen-ahlgren et al., Silicon diffusion in amorphous carbon films, J NUCL MAT, 290, 2001, pp. 216-219
Authors:
Xiang, N
Tukiainen, A
Dekker, J
Likonen, J
Pessa, M
Citation: N. Xiang et al., Oxygen-related deep level defects in solid-source MBE grown GaInP, J CRYST GR, 227, 2001, pp. 244-248
Authors:
Li, W
Pessa, M
Likonen, J
Citation: W. Li et al., Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law, APPL PHYS L, 78(19), 2001, pp. 2864-2866
Authors:
Pollanen, R
Klemola, S
Ikaheimonen, TK
Rissanen, K
Juhanoja, J
Paavolainen, S
Likonen, J
Citation: R. Pollanen et al., Analysis of radioactive particles from the Kola Bay area, ANALYST, 126(5), 2001, pp. 724-730
Authors:
Kyllonen, V
Raisanen, J
Seppala, A
Ahlgren, T
Likonen, J
Citation: V. Kyllonen et al., Annealing behaviour of aluminium-implanted InP, NUCL INST B, 161, 2000, pp. 673-676
Authors:
Li, W
Likonen, J
Haapamaa, J
Pessa, M
Citation: W. Li et al., Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy, J CRYST GR, 209(2-3), 2000, pp. 459-462
Authors:
Li, W
Likonen, J
Haapamaa, J
Pessa, M
Citation: W. Li et al., Study of concentration-dependent Be diffusion in GaInP layers grown by gassource molecular beam epitaxy, J APPL PHYS, 87(10), 2000, pp. 7592-7593
Authors:
Vainonen-Ahlgren, E
Ahlgren, T
Likonen, J
Lehto, S
Keinonen, J
Li, W
Haapamaa, J
Citation: E. Vainonen-ahlgren et al., Identification of vacancy charge states in diffusion of arsenic in germanium, APPL PHYS L, 77(5), 2000, pp. 690-692
Authors:
Saarinen, K
Nissila, J
Oila, J
Ranki, V
Hakala, M
Puska, MJ
Hautojarvi, P
Likonen, J
Suski, T
Grzegory, I
Lucznik, B
Porowski, S
Citation: K. Saarinen et al., Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals, PHYSICA B, 274, 1999, pp. 33-38
Authors:
Oila, J
Saarinen, K
Laine, T
Hautojarvi, P
Uusimaa, P
Pessa, M
Likonen, J
Citation: J. Oila et al., The deactivation of nitrogen accepters in ZnSxSe1-x and MgyZn1-ySxSe1-x studied by combining positron annihilation, SIMS, and CV measurements, PHYSICA B, 274, 1999, pp. 902-906
Authors:
Rinta-Moykky, A
Uusimaa, P
Suhonen, S
Valden, M
Salokatve, A
Pessa, M
Likonen, J
Citation: A. Rinta-moykky et al., Study of ohmic multilayer metal contacts to p-type ZnSe, J VAC SCI A, 17(2), 1999, pp. 347-353
Authors:
Oila, J
Saarinen, K
Laine, T
Hautojarvi, P
Uusimaa, P
Pessa, M
Likonen, J
Citation: J. Oila et al., Experimental identification of the doping deactivation mechanism in semiconductors: Application to nitrogen in ZnS0.06Se0.94, PHYS REV B, 59(20), 1999, pp. R12736-R12739
Authors:
Vainonen-Ahlgren, E
Tikkanen, P
Likonen, J
Rauhala, E
Keinonen, J
Citation: E. Vainonen-ahlgren et al., Hydrogen in diamond-like carbon films, J NUCL MAT, 269, 1999, pp. 975-979
Authors:
Saarinen, K
Nissila, J
Hautojarvi, P
Likonen, J
Suski, T
Grzegory, I
Lucznik, B
Porowski, S
Citation: K. Saarinen et al., The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals, APPL PHYS L, 75(16), 1999, pp. 2441-2443
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