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Results: 1-8 |
Results: 8
Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE
Authors: Witte, H Krtschil, A Lisker, M Krost, A Christen, J Kuhn, B Scholz, F
Citation: H. Witte et al., Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE, MAT SCI E B, 82(1-3), 2001, pp. 85-87
Fermi level pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy
Authors: Witte, H Krtschil, A Lisker, M Rudloff, D Christen, J Krost, A Stutzmann, M Scholz, F
Citation: H. Witte et al., Fermi level pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy, MRS I J N S, 5, 2000, pp. NIL_804-NIL_809
Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy
Authors: Krtschil, A Witte, H Lisker, M Christen, J Krost, A Birkle, U Einfeldt, S Hommel, D Scholz, F Off, J Stutzmann, M
Citation: A. Krtschil et al., Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy, APPL PHYS L, 77(4), 2000, pp. 546-548
Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy
Authors: Krtschil, A Lisker, M Witte, H Christen, J Birkle, U Einfeldt, S Hommel, D
Citation: A. Krtschil et al., Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy, MAT SCI E B, 59(1-3), 1999, pp. 226-229
Incorporation of deep defects in GaN induced by doping and implantation processes
Authors: Krtschil, A Witte, H Lisker, M Christen, J Krost, A Birkle, U Einfeldt, S Hommel, D Wenzel, A Rauschenbach, B
Citation: A. Krtschil et al., Incorporation of deep defects in GaN induced by doping and implantation processes, PHYS ST S-B, 216(1), 1999, pp. 587-591
Influence of carbon doping on the photoconductivity in GaN layers
Authors: Lisker, M Krtschil, A Witte, H Christen, J Krost, A Birkle, U Einfeldt, S Hommel, D
Citation: M. Lisker et al., Influence of carbon doping on the photoconductivity in GaN layers, PHYS ST S-B, 216(1), 1999, pp. 593-597
Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasmasources
Authors: Krtschil, A Witte, H Lisker, M Christen, J Birkle, U Einfeldt, S Hommel, D
Citation: A. Krtschil et al., Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasmasources, APPL PHYS L, 74(14), 1999, pp. 2032-2034
Interface and bulk defects in SiC/GaN heterostructures characterized usingthermal admittance spectroscopy
Authors: Witte, H Krtschil, A Lisker, M Christen, J Topf, M Meister, D Meyer, BK
Citation: H. Witte et al., Interface and bulk defects in SiC/GaN heterostructures characterized usingthermal admittance spectroscopy, APPL PHYS L, 74(10), 1999, pp. 1424-1426
Risultati: 1-8 |