Authors: Krishna, S Sabarinathan, J Linder, K Bhattacharya, P Lita, B Goldman, RS

Citation: S. Krishna et al., Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots, J VAC SCI B, 18(3), 2000, pp. 1502-1506

Authors: Lita, B Goldman, RS Phillips, JD Bhattacharya, PK

Citation: B. Lita et al., Interdiffusion, segregation, and dissolution in InAs/GaAs quantum dot superlattices, SURF REV L, 7(5-6), 2000, pp. 539-545

Authors: Lita, B Beck, M Goldman, RS Seryogin, GA Nikishin, SA Temkin, H

Citation: B. Lita et al., Structural and compositional variations in ZnSnP2/GaAs superlattices, APPL PHYS L, 77(18), 2000, pp. 2894-2896

Authors: Lita, B Ghaisas, S Goldman, RS Melloch, MR

Citation: B. Lita et al., Nanometer-scale studies of Al-Ga interdiffusion and As precipitate coarsening in nonstoichiometric AlAs/GaAs superlattices, APPL PHYS L, 75(26), 1999, pp. 4082-4084

Authors: Lita, B Goldman, RS Phillips, JD Bhattacharya, PK

Citation: B. Lita et al., Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots, APPL PHYS L, 74(19), 1999, pp. 2824-2826