Authors: Krukowski, S Bockowski, M Lucznik, B Grzegory, I Porowski, S Suski, T Romanowski, Z

Citation: S. Krukowski et al., High-nitrogen-pressure growth of GaN single crystals: doping and physical properties, J PHYS-COND, 13(40), 2001, pp. 8881-8890

Authors: Teisseyre, H Ochalski, TJ Perlin, P Suski, T Leszczynski, M Grzegory, I Bockowski, M Lucznik, B Bugajski, M Palczewska, M Gebicki, W

Citation: H. Teisseyre et al., The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure, HIGH PR RES, 18(1-6), 2000, pp. 35-39

Authors: Leszczynski, M Prystawko, P Suski, T Lucznik, B Domagala, J Bak-Misiuk, J Stonert, A Turos, A Langer, R Barski, A

Citation: M. Leszczynski et al., Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire, J ALLOY COM, 286(1-2), 1999, pp. 271-275

Authors: Saarinen, K Nissila, J Oila, J Ranki, V Hakala, M Puska, MJ Hautojarvi, P Likonen, J Suski, T Grzegory, I Lucznik, B Porowski, S

Citation: K. Saarinen et al., Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals, PHYSICA B, 274, 1999, pp. 33-38

Authors: Grzegory, I Kozubowski, JA Borysiuk, J Weyher, JL Bockowski, M Lucznik, B Porowski, S

Citation: I. Grzegory et al., Micro defects in nearly dislocation free GaN doped with Mg during high pressure crystallization, PHYS ST S-B, 216(1), 1999, pp. 537-540

Authors: Saarinen, K Nissila, J Hautojarvi, P Likonen, J Suski, T Grzegory, I Lucznik, B Porowski, S

Citation: K. Saarinen et al., The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals, APPL PHYS L, 75(16), 1999, pp. 2441-2443