AAAAAA

   
Results: 1-10 |
Results: 10
Specifics of MOCVD formation of InxGa1-xN inclusions in a GaN matrix
Authors: Soshnikov, IP Lundin, VV Usikov, AS Kalmykova, IP Ledentsov, NN Rosenauer, A Neubauer, B Gerthsen, D
Citation: Ip. Soshnikov et al., Specifics of MOCVD formation of InxGa1-xN inclusions in a GaN matrix, SEMICONDUCT, 34(6), 2000, pp. 621-625
On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate
Authors: Efimov, AN Lebedev, AO Lundin, VV Usikov, AS
Citation: An. Efimov et al., On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate, CRYSTALLO R, 45(2), 2000, pp. 312-317
Point defects in gamma-irradiated n-GaN
Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Lundin, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Point defects in gamma-irradiated n-GaN, SEMIC SCI T, 15(1), 2000, pp. 73-78
Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films
Authors: Emtsev, VV Davydov, VY Lundin, VV Poloskin, DS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Fedler, F Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films, J CRYST GR, 210(1-3), 2000, pp. 273-277
Lasing in the vertical direction in quantum-size InGaN GaN multilayer heterostructures
Authors: Sakharov, AV Lundin, VV Semenov, VA Usikov, AS Ledentsov, NN Tsatsul'nikov, AF Baidakova, MV
Citation: Av. Sakharov et al., Lasing in the vertical direction in quantum-size InGaN GaN multilayer heterostructures, TECH PHYS L, 25(6), 1999, pp. 462-465
Photoinduced self-organization of gallium nanowires on a GaN surface
Authors: Bedarev, DA Kognovitskii, SO Lundin, VV
Citation: Da. Bedarev et al., Photoinduced self-organization of gallium nanowires on a GaN surface, TECH PHYS L, 25(5), 1999, pp. 385-387
Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence
Authors: Usikov, AS Tret'yakov, VV Lundin, VV Zadiranov, YM Pushnyi, BV Konnikov, SG
Citation: As. Usikov et al., Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence, TECH PHYS L, 25(4), 1999, pp. 253-256
Investigation of MOVPE-grown GaN layers doped with As atoms
Authors: Tsatsul'nikov, AF Ber, BY Kartashova, AP Kudryavtsev, YA Ledentsov, NN Lundin, VV Maksimov, MV Sakharov, AV Usikov, AS Alferov, ZI Hoffmann, A
Citation: Af. Tsatsul'Nikov et al., Investigation of MOVPE-grown GaN layers doped with As atoms, SEMICONDUCT, 33(7), 1999, pp. 728-730
Effect of annealing on the optical and structural properties of GaN : Er
Authors: Sobolev, NA Lundin, VV Sakharov, VI Serenkov, IT Usikov, AS Emel'yanov, AM
Citation: Na. Sobolev et al., Effect of annealing on the optical and structural properties of GaN : Er, SEMICONDUCT, 33(6), 1999, pp. 624-626
Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 mu m
Authors: Davydov, VY Lundin, VV Smirnov, AN Sobolev, NA Usikov, AS Emel'yanov, AM Makoviichuk, MI Parshin, EO
Citation: Vy. Davydov et al., Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 mu m, SEMICONDUCT, 33(1), 1999, pp. 1-5
Risultati: 1-10 |