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Results: 1-9 |
Results: 9
Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures afterhydrogen or helium ion implantation for virtual substrate fabrication
Authors: Hollander, B Lenk, S Mantl, S Trinkaus, H Kirch, D Luysberg, M Hackbarth, T Herzog, HJ Fichtner, PFP
Citation: B. Hollander et al., Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures afterhydrogen or helium ion implantation for virtual substrate fabrication, NUCL INST B, 175, 2001, pp. 357-367
Do arsenic interstitials really exist in As-rich GaAs? art. no. 045504
Authors: Staab, TEM Nieminen, RM Gebauer, J Krause-Rehberg, R Luysberg, M Haugk, M Frauenheim, T
Citation: Tem. Staab et al., Do arsenic interstitials really exist in As-rich GaAs? art. no. 045504, PHYS REV L, 8704(4), 2001, pp. 5504
Reentrant mound formation in GaAs(001) homoepitaxy observed by ex situ atomic force microscopy
Authors: Apostolopoulos, G Herfort, J Daweritz, L Ploog, KH Luysberg, M
Citation: G. Apostolopoulos et al., Reentrant mound formation in GaAs(001) homoepitaxy observed by ex situ atomic force microscopy, PHYS REV L, 84(15), 2000, pp. 3358-3361
Defect identification in GaAs grown at low temperatures by positron annihilation
Authors: Gebauer, J Borner, F Krause-Rehberg, R Staab, TEM Bauer-Kugelmann, W Kogel, G Triftshauser, W Specht, P Lutz, RC Weber, ER Luysberg, M
Citation: J. Gebauer et al., Defect identification in GaAs grown at low temperatures by positron annihilation, J APPL PHYS, 87(12), 2000, pp. 8368-8379
Improvement of molecular beam epitaxy-grown low-temperature GaAs through pdoping with Be and C
Authors: Specht, P Lutz, RC Zhao, R Weber, ER Liu, WK Bacher, K Towner, FJ Stewart, TR Luysberg, M
Citation: P. Specht et al., Improvement of molecular beam epitaxy-grown low-temperature GaAs through pdoping with Be and C, J VAC SCI B, 17(3), 1999, pp. 1200-1204
Structural properties of microcrystalline silicon-germanium films
Authors: Houben, L Carius, R Lundszien, D Folsch, J Finger, F Luysberg, M Wagner, H
Citation: L. Houben et al., Structural properties of microcrystalline silicon-germanium films, PHIL MAG L, 79(2), 1999, pp. 71-78
Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs
Authors: Haiml, M Siegner, U Morier-Genoud, F Keller, U Luysberg, M Specht, P Weber, ER
Citation: M. Haiml et al., Femtosecond response times and high optical nonlinearity in beryllium-doped low-temperature grown GaAs, APPL PHYS L, 74(9), 1999, pp. 1269-1271
Optical nonlinearity in low-temperature-grown GaAs: Microscopic limitations and optimization strategies
Authors: Haiml, M Siegner, U Morier-Genoud, F Keller, U Luysberg, M Lutz, RC Specht, P Weber, ER
Citation: M. Haiml et al., Optical nonlinearity in low-temperature-grown GaAs: Microscopic limitations and optimization strategies, APPL PHYS L, 74(21), 1999, pp. 3134-3136
Contributions to understanding the optical properties of partially ordered(Al0.3Ga0.7)(0.52)In0.48P
Authors: Schmidt, R von der Ahe, M Dieker, C Gauer, D Hardtdegen, H Hauck, T Luysberg, M Meertens, D Schmitz, D
Citation: R. Schmidt et al., Contributions to understanding the optical properties of partially ordered(Al0.3Ga0.7)(0.52)In0.48P, J CRYST GR, 195(1-4), 1998, pp. 124-131
Risultati: 1-9 |