Authors:
Hoke, WE
Lyman, PS
Whelan, CS
Mosca, JJ
Torabi, A
Chang, KL
Hsieh, KC
Citation: We. Hoke et al., Growth and characterization of metamorphic In-x(AlGa)(1-x)As/InxGa1-xAs high electron mobility transistor material and devices with X=0.3-0.4, J VAC SCI B, 18(3), 2000, pp. 1638-1641
Authors:
Whelan, CS
Marsh, PF
Hoke, WE
McTaggart, RA
Lyman, PS
Lemonias, PJ
Lardizabal, SM
Leoni, RE
Lichwala, SJ
Kazior, TE
Citation: Cs. Whelan et al., Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates, IEEE J SOLI, 35(9), 2000, pp. 1307-1311
Citation: Sk. Brierley et al., Precise determination of indium composition and channel thickness in pseudomorphic high electron mobility transistors using room temperature photoluminescence, J APPL PHYS, 86(2), 1999, pp. 914-917