Authors: ROSS FM OSKAM G SEARSON PC MACAULAY JM LIDDLE JA

Citation: Fm. Ross et al., CRYSTALLOGRAPHIC ASPECTS OF PORE FORMATION IN GALLIUM-ARSENIDE AND SILICON, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 75(2), 1997, pp. 525-539

Authors: NIKOLOVA MS NATARAJAN A SEARSON PC CHAKAROVA GS MACAULAY JM

Citation: Ms. Nikolova et al., ELECTROCHEMICAL FABRICATION OF SHARP NICKEL TIPS IN H2SO4 SOLUTIONS, Journal of the Electrochemical Society, 144(2), 1997, pp. 455-460

Authors: WANG CJ SHOVLIN JD KORDESCH ME MACAULAY JM

Citation: Cj. Wang et al., REAL-TIME, IN-SITU PHOTOELECTRON EMISSION MICROSCOPY OBSERVATION OF CVD DIAMOND OXIDATION AND DISSOLUTION ON MOLYBDENUM, DIAMOND AND RELATED MATERIALS, 3(7), 1994, pp. 1066-1071

Authors: MACAULAY JM HULL R JALALI B MAGEE C

Citation: Jm. Macaulay et al., CHARACTERIZATION OF ARSENIC DOPING PROFILE ACROSS THE POLYCRYSTALLINESI SI INTERFACE IN POLYCRYSTALLINE SI EMITTER BIPOLAR-TRANSISTORS/, Applied physics letters, 63(9), 1993, pp. 1258-1260