Authors: BASSIGNANA IC MACQUISTAN DA HILLIER GC STREATER R BECKETT D MAJEED A MINER C

Citation: Ic. Bassignana et al., VARIATION IN THE LATTICE-PARAMETER AND CRYSTAL QUALITY OF COMMERCIALLY AVAILABLE SI-DOPED GAAS SUBSTRATES, Journal of crystal growth, 178(4), 1997, pp. 445-458

Authors: BASSIGNANA IC MACQUISTAN DA STREATER RW HILLIER GC PACKWOOD R MOORE V

Citation: Ic. Bassignana et al., SETTING LIMITS ON THE ACCURACY OF X-RAY DETERMINATION OF AL CONCENTRATION IN ALGAAS GAAS EPITAXIAL LAYERS/, Journal of crystal growth, 172(1-2), 1997, pp. 25-36