AAAAAA

   
Results: 1-2 |
Results: 2
LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) SEMIINSULATING OXYGEN-DOPED SILICON FILMS BY THE PECVD TECHNIQUE FOR LARGE-AREA POWERAPPLICATIONS
Authors: CLOUGH FJ BROWN AO MADATHIL SNE MILNE WI
Citation: Fj. Clough et al., LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) SEMIINSULATING OXYGEN-DOPED SILICON FILMS BY THE PECVD TECHNIQUE FOR LARGE-AREA POWERAPPLICATIONS, Microelectronic engineering, 28(1-4), 1995, pp. 451-454
LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) SEMIINSULATING OXYGEN-DOPED SILICON FILMS BY THE PECVD TECHNIQUE FOR LARGE-AREA POWERAPPLICATIONS
Authors: CLOUGH FJ BROWN AO MADATHIL SNE MILNE WI
Citation: Fj. Clough et al., LOW-TEMPERATURE (LESS-THAN-OR-EQUAL-TO-600-DEGREES-C) SEMIINSULATING OXYGEN-DOPED SILICON FILMS BY THE PECVD TECHNIQUE FOR LARGE-AREA POWERAPPLICATIONS, Thin solid films, 270(1-2), 1995, pp. 517-521
Risultati: 1-2 |