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Results: 1-10 |
Results: 10
SUBGAP ABSORPTION STUDY OF CHEMICAL-VAPOR-DEPOSITED THIN DIAMOND FILMS
Authors: ZAMMIT U MADHUSOODANAN KN MARINELLI M MERCURI F FOGLIETTA S
Citation: U. Zammit et al., SUBGAP ABSORPTION STUDY OF CHEMICAL-VAPOR-DEPOSITED THIN DIAMOND FILMS, Physical review. B, Condensed matter, 57(8), 1998, pp. 4518-4524
CHARACTERISTICS OF PHOTOCONDUCTIVITY IN AMORPHOUS GEXSB10SE90-X THIN-FILMS
Authors: MATHEW G MADHUSOODANAN KN PHILIP J
Citation: G. Mathew et al., CHARACTERISTICS OF PHOTOCONDUCTIVITY IN AMORPHOUS GEXSB10SE90-X THIN-FILMS, Physica status solidi. a, Applied research, 168(1), 1998, pp. 239-248
COMPOSITION DEPENDENCE OF THE GLASS-TRANSITION IN GE-SE-TE GLASSES
Authors: GANESAN R SRINIVASAN A MADHUSOODANAN KN SANGUNNI KS GOPAL ESR
Citation: R. Ganesan et al., COMPOSITION DEPENDENCE OF THE GLASS-TRANSITION IN GE-SE-TE GLASSES, Physica status solidi. b, Basic research, 190(2), 1995, pp. 23-26
OPTICAL-ABSORPTION IN ION-IMPLANTED SI FILMS
Authors: ZAMMIT U MADHUSOODANAN KN MARINELLI M SCUDIERI F MERCURI F WENDLER E WESCH W
Citation: U. Zammit et al., OPTICAL-ABSORPTION IN ION-IMPLANTED SI FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 241-244
DISORDER AND ABSORPTION EDGES IN ION-IRRADIATED HYDROGENATED AMORPHOUS-CARBON FILMS
Authors: COMPAGNINI G ZAMMIT U MADHUSOODANAN KN FOTI G
Citation: G. Compagnini et al., DISORDER AND ABSORPTION EDGES IN ION-IRRADIATED HYDROGENATED AMORPHOUS-CARBON FILMS, Physical review. B, Condensed matter, 51(16), 1995, pp. 11168-11171
OPTICAL-ABSORPTION STUDIES OF ION-IMPLANTED AND AMORPHOUS-SILICON
Authors: ZAMMIT U MADHUSOODANAN KN MARINELLI M SCUDIERI F PIZZOFERRATO R MERCURI F WENDLER E WESCH W
Citation: U. Zammit et al., OPTICAL-ABSORPTION STUDIES OF ION-IMPLANTED AND AMORPHOUS-SILICON, Journal de physique. IV, 4(C7), 1994, pp. 113-120
DEFECT INVESTIGATION IN BORON-IMPLANTED SILICON BY MEANS OF TEMPERATURE-DEPENDENT RBS AND OPTICAL NEAR-EDGE ABSORPTION
Authors: WENDLER E GARTNER K WESCH W ZAMMIT U MADHUSOODANAN KN
Citation: E. Wendler et al., DEFECT INVESTIGATION IN BORON-IMPLANTED SILICON BY MEANS OF TEMPERATURE-DEPENDENT RBS AND OPTICAL NEAR-EDGE ABSORPTION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 528-532
OPTICAL-ABSORPTION STUDY OF STRUCTURAL RELAXATION OF ION-IMPLANTED A-SI
Authors: ZAMMIT U MADHUSOODANAN KN SCUDIERI F MERCURI F WENDLER E WESCH W
Citation: U. Zammit et al., OPTICAL-ABSORPTION STUDY OF STRUCTURAL RELAXATION OF ION-IMPLANTED A-SI, Physical review. B, Condensed matter, 49(3), 1994, pp. 2163-2166
OPTICAL-ABSORPTION STUDIES OF ION-IMPLANTATION DAMAGE IN SI ON SAPPHIRE
Authors: ZAMMIT U MADHUSOODANAN KN MARINELLI M SCUDIERI F PIZZOFERRATO R MERCURI F WENDLER E WESCH W
Citation: U. Zammit et al., OPTICAL-ABSORPTION STUDIES OF ION-IMPLANTATION DAMAGE IN SI ON SAPPHIRE, Physical review. B, Condensed matter, 49(20), 1994, pp. 14322-14330
ANOMALOUS BEHAVIOR IN THE COMPOSITION DEPENDENCE OF THE PHOTOACOUSTICPROPERTIES OF SI-AS-TE GLASSES
Authors: SRINIVASAN A MADHUSOODANAN KN GOPAL ESR PHILIP J
Citation: A. Srinivasan et al., ANOMALOUS BEHAVIOR IN THE COMPOSITION DEPENDENCE OF THE PHOTOACOUSTICPROPERTIES OF SI-AS-TE GLASSES, Journal of non-crystalline solids, 155(3), 1993, pp. 267-272
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