Authors: DHARMARASU N ARULKUMARAN S SUMATHI RR JAYAVEL P KUMAR J MAGUDAPATHY P NAIR KGM

Citation: N. Dharmarasu et al., LOW-ENERGY PROTON IRRADIATION-INDUCED INTERFACE DEFECTS ON PD N-GAAS SCHOTTKY DIODES AND ITS CHARACTERISTICS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 140(1-2), 1998, pp. 119-123

Authors: KENNEDY VJ AUGUSTHY A VARIER KM MAGUDAPATHY P NAIR KGM DHAL BB PADHI HC

Citation: Vj. Kennedy et al., L X-RAY-PRODUCTION CROSS-SECTIONS AND THEIR RATIOS IN TA, W AND PT FOR PROTON IMPACT IN THE ENERGY-RANGE 2-5.2 MEV, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 134(2), 1998, pp. 165-173

Authors: KENNEDY VJ AUGUSTHY A VARIER KM MAGUDAPATHY P PANCHAPAKESAN S RAMESH C NAIR KGM VIJAYAN V

Citation: Vj. Kennedy et al., PIXE ANALYSIS OF TRACE POLLUTANTS IN CHALIYAR RIVER WATER IN MALABAR,INDIA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 134(2), 1998, pp. 224-228

Authors: ARULKUMARAN S AROKIARAJ J DHARMARASU N KUMAR J MAGUDAPATHY P NAIR KGM

Citation: S. Arulkumaran et al., CURRENT-VOLTAGE CHARACTERISTICS OF LOW-ENERGY PROTON AND ALPHA-PARTICLE IRRADIATED AU AND AG N-GAAS SCHOTTKY-BARRIER DIODES/, Solid-state electronics, 41(5), 1997, pp. 802-805

Authors: UDHAYASANKAR M ARULKUMARAN S AROKIARAJ J SANTHANARAGHAVAN P SUNDARAKANNAN B KUMAR J RAMASAMY P NAIR KGM MAGUDAPATHY P THAMPI NS KRISHAN K

Citation: M. Udhayasankar et al., EFFECT OF IRRADIATION ON THE MICROHARDNESS OF THE LEC GROWN SEMIINSULATING GAAS SINGLE-CRYSTALS, Journal of nuclear materials, 225, 1995, pp. 314-317

Authors: AROKIARAJ J ARULKUMARAN S UDHAYSANKAR M SANTHANARAGHAVAN P KUMAR J RAMASAMY P NAIR KGM MAGUDAPATHY P THAMPI NS KRISHAN K

Citation: J. Arokiaraj et al., STRUCTURAL AND MECHANICAL-PROPERTIES OF ION-IMPLANTED GAAS AND INP SINGLE-CRYSTALS GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI TECHNIQUE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 461-464