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Results:
1-7
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Results: 7
Authors:
DICKMANN J
RIEPE K
GEYER A
MAILE BE
SCHURR A
BERG M
DAEMBKES H
Citation: J. Dickmann et al., IN(0.52)A(0.48)AS INXGA1-XAS (0.53-LESS-THAN-X-LESS-THAN-1.0) PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES- DESIGN AND PERFORMANCES/, JPN J A P 1, 35(1A), 1996, pp. 10-15
Authors:
MAILE BE
HACKBARTH T
WAAS T
Citation: Be. Maile et al., IMPACT OF PROXIMITY CORRECTION ON DEVICE YIELD IN ELECTRON-BEAM DEFINITION OF MSM-DETECTORS, Microelectronic engineering, 30(1-4), 1996, pp. 35-40
Authors:
DICKMANN J
SCHILDBERG S
RIEPE K
MAILE BE
SCHURR A
GEYER A
NAROZNY P
Citation: J. Dickmann et al., BREAKDOWN MECHANISMS IN PSEUDOMORPHIC INALAS INXGA1-XAS HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP .2. ON-STATE/, JPN J A P 1, 34(4A), 1995, pp. 1805-1808
Authors:
DICKMANN J
SCHILDBERG S
RIEPE K
MAILE BE
SCHURR A
GEYER A
NAROZNY P
Citation: J. Dickmann et al., BREAKDOWN MECHANISMS IN PSEUDOMORPHIC INALAS INXGA1-X HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP .1. OFF-STATE/, JPN J A P 1, 34(1), 1995, pp. 66-71
Authors:
MEINERS U
BRUGGER H
MAILE BE
WOLK C
KOCH F
Citation: U. Meiners et al., QUASI-ONE-DIMENSIONAL IN-PLANE-GATE FIELD-EFFECT-TRANSISTOR, Solid-state electronics, 37(4-6), 1994, pp. 1001-1004
Authors:
MAILE BE
Citation: Be. Maile, FABRICATION LIMITS OF NANOMETER-T AND GAMMA-GATES - THEORY AND EXPERIMENT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2502-2508
Authors:
DICKMANN J
KOSSLOWSKI S
MAILE BE
HASPEKLO H
HEUTHE S
GEYER A
RIEPE K
SCHURR A
DAEMBKES H
KUNZEL H
BOTTCHER J
Citation: J. Dickmann et al., HIGH-GAIN 28 GHZ COPLANAR WAVE-GUIDE MONOLITHIC AMPLIFIER ON INP SUBSTRATE, Electronics Letters, 29(5), 1993, pp. 493-495
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1-7
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