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Results:
1-14
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Results: 14
Authors:
MELLITI R
TRONC P
MAO E
MAJERFELD A
DEPEYROT J
Citation: R. Melliti et al., VALENCE-BAND STRUCTURE AND OPTICAL-ABSORPTION IN P-TYPE GAAS-AL0.3GA0.7AS MULTI-QUANTUM-WELL INFRARED PHOTODETECTORS UNDER AN ELECTRIC-FIELD, Superlattices and microstructures, 23(5), 1998, pp. 1037-1046
Authors:
DICKEY SA
MAJERFELD A
SANCHEZROJAS JL
SACEDON A
MUNOZ E
SANZHERVAS A
AGUILAR M
KIM BW
Citation: Sa. Dickey et al., DIRECT DETERMINATION OF THE PIEZOELECTRIC FIELD IN (111) STRAINED INGAAS GAAS MULTIPLE-QUANTUM-WELL P-I-N STRUCTURES BY PHOTOREFLECTANCE/, Microelectronic engineering, 43-4, 1998, pp. 171-177
Authors:
WANG G
TRONC P
MELLITI R
MAO E
MAJERFELD A
SANZHERVAS A
DEPEYROT J
KIM BW
Citation: G. Wang et al., PHOTOREFLECTANCE STUDY OF [111]-GAAS ALGAAS QUANTUM-WELLS AT ROOM-TEMPERATURE/, Physica status solidi. a, Applied research, 164(1), 1997, pp. 117-121
Authors:
MAO E
DICKEY SA
MAJERFELD A
SANZHERVAS A
KIM BW
Citation: E. Mao et al., HIGH-QUALITY GAAS ALGAAS QUANTUM-WELLS GOWN ON (111)A SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY/, Microelectronics, 28(8-10), 1997, pp. 727-734
Authors:
MAO E
MAJERFELD A
Citation: E. Mao et A. Majerfeld, GROWTH OF HEAVILY C-DOPED GAAS ALGAAS MQW STRUCTURES BY MOVPE FOR 2-3-MU-M NORMAL INCIDENCE PHOTODETECTORS/, Journal of crystal growth, 170(1-4), 1997, pp. 428-432
Authors:
KIM BW
MAO E
MAJERFELD A
Citation: Bw. Kim et al., ANALYSIS OF OPTICAL-PROPERTIES OF P-TYPE GAAS ALGAAS SUPERLATTICES FOR MULTIWAVELENGTH NORMAL INCIDENCE PHOTODETECTORS/, Journal of applied physics, 81(4), 1997, pp. 1883-1889
Authors:
KIM BW
MAJERFELD A
Citation: Bw. Kim et A. Majerfeld, 2-BAND ANALYSIS OF HOLE MOBILITY AND HALL FACTOR FOR HEAVILY CARBON-DOPED P-TYPE GAAS, Journal of applied physics, 79(4), 1996, pp. 1939-1950
Authors:
LU ZH
MAJERFELD A
WRIGHT PD
YANG LW
Citation: Zh. Lu et al., A COMPREHENSIVE OPTICAL CHARACTERIZATION METHOD FOR HIGH-PERFORMANCE N-P-N ALGAAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS, IEEE journal of selected topics in quantum electronics, 1(4), 1995, pp. 1030-1036
Authors:
KIM BW
MAJERFELD A
Citation: Bw. Kim et A. Majerfeld, ANALYSIS OF IONIZED-IMPURITY-SCATTERING RELAXATION-TIME AND MOBILITY BY THE PHASE-SHIFT METHOD FOR 2 INTERACTING VALENCE BANDS, Physical review. B, Condensed matter, 51(3), 1995, pp. 1553-1561
Authors:
KIM BW
MAJERFELD A
Citation: Bw. Kim et A. Majerfeld, ELECTRONIC AND INTERSUBBAND OPTICAL-PROPERTIES OF P-TYPE GAAS AIGAAS SUPERLATTICES FOR INFRARED PHOTODETECTORS/, Journal of applied physics, 77(9), 1995, pp. 4552-4563
Authors:
DICKEY SA
LU ZH
MAO E
OH EG
MAJERFELD A
Citation: Sa. Dickey et al., DETERMINATION OF CARRIER AND IMPURITY PROFILES IN DOPED N-TYPE QUANTUM-WELL STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 341-345
Authors:
LU ZH
MAJERFELD A
Citation: Zh. Lu et A. Majerfeld, ELIMINATION OF AN ARTIFACT IN THE PHOTOLUMINESCENCE SPECTRA OF HEAVILY-DOPED C-GAAS EPITAXIAL LAYERS ON UNDOPED GAAS SUBSTRATES, Journal of applied physics, 75(5), 1994, pp. 2648-2651
Authors:
LU ZH
HANNA MC
MAJERFELD A
Citation: Zh. Lu et al., DETERMINATION OF BAND-GAP NARROWING AND HOLE DENSITY FOR HEAVILY C-DOPED GAAS BY PHOTOLUMINESCENCE SPECTROSCOPY, Applied physics letters, 64(1), 1994, pp. 88-90
Authors:
OH EG
HANNA MC
LU ZH
SZMYD DM
MAJERFELD A
Citation: Eg. Oh et al., PROPERTIES OF THE DEEP DONOR STATES OF ALXGA1-XASSE, Journal of applied physics, 74(2), 1993, pp. 1057-1071
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