Authors: MAKSIMOV AY MALTSEV AA YUSHIN NK NIKITINA IP

Citation: Ay. Maksimov et al., SUBLIMATION EPITAXY OF 6H-SIC AND 4H-SIC ON SILICON-CARBIDE 1-INCH MONOCRYSTALLINE SUBSTRATES PREPARED FROM VOLUME BARS, Pis'ma v Zurnal tehniceskoj fiziki, 21(8), 1995, pp. 51-57

Authors: MAKSIMOV AY MALTSEV AA YUSHIN NK BARASH IS

Citation: Ay. Maksimov et al., GROWTH OF VOLUME SILICON-CARBIDE MONOCRYS TALS OF 4H AND 6H POLYTYPES, Pis'ma v Zurnal tehniceskoj fiziki, 21(10), 1995, pp. 20-24

Authors: MAKSIMOV AY MALTSEV AA YUSHIN NK ANDRIANOV GO

Citation: Ay. Maksimov et al., ACOUSTIC PROPERTIES OF VOLUME CRYSTAL OF 4H-POLYTYPE SILICON-CARBIDE, Pis'ma v Zurnal tehniceskoj fiziki, 20(4), 1994, pp. 45-49

Authors: MAKSIMOV AY MALTSEV AA YUSHIN NK

Citation: Ay. Maksimov et al., CORRESPONDENCE OF LATTICES OF CUBIC(3C) H EXAGONAL(4H) POLYTYPES OF SILICON-CARBIDE, Pis'ma v Zurnal tehniceskoj fiziki, 20(24), 1994, pp. 50-54

Authors: MAKSIMOV AY MALTSEV AA SHULMAN SG YUSHIN NK

Citation: Ay. Maksimov et al., APPLICATION OF FERROELECTRIC-FILMS ON SIL ICON-CARBIDE, Pis'ma v Zurnal tehniceskoj fiziki, 20(1), 1994, pp. 40-43

Authors: MAKSIMOV AY MALTSEV AA YUSHIN NK

Citation: Ay. Maksimov et al., SILICON-CARBIDE USE IN INTEGRAL OPTICS, Pis'ma v Zurnal tehniceskoj fiziki, 19(9), 1993, pp. 74-78