AAAAAA

   
Results: 1-8 |
Results: 8
DIAMOND DEVICES AND ELECTRICAL-PROPERTIES
Authors: FOX BA HARTSELL ML MALTA DM WYNANDS HA KAO CT PLANO LS TESSMER GJ HENARD RB HOLMES JS DREIFUS DL
Citation: Ba. Fox et al., DIAMOND DEVICES AND ELECTRICAL-PROPERTIES, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 622-627
COMPARISON OF THE ELECTRICAL-PROPERTIES OF SIMULTANEOUSLY DEPOSITED HOMOEPITAXIAL AND POLYCRYSTALLINE DIAMOND FILMS
Authors: MALTA DM VONWINDHEIM JA WYNANDS HA FOX BA
Citation: Dm. Malta et al., COMPARISON OF THE ELECTRICAL-PROPERTIES OF SIMULTANEOUSLY DEPOSITED HOMOEPITAXIAL AND POLYCRYSTALLINE DIAMOND FILMS, Journal of applied physics, 77(4), 1995, pp. 1536-1545
EPITAXIAL NUCLEATION, GROWTH AND CHARACTERIZATION OF HIGHLY ORIENTED,(100)-TEXTURED DIAMOND FILMS ON SILICON
Authors: FOX BA STONER BR MALTA DM ELLIS PJ GLASS RC SIVAZLIAN FR
Citation: Ba. Fox et al., EPITAXIAL NUCLEATION, GROWTH AND CHARACTERIZATION OF HIGHLY ORIENTED,(100)-TEXTURED DIAMOND FILMS ON SILICON, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 382-387
IMPURITY-CHARACTERIZATION AGREEMENT IN TYPE-IIB SINGLE-CRYSTAL DIAMOND BY HIGH-TEMPERATURE HALL-EFFECT, CAPACITANCE-VOLTAGE, AND SECONDARY-ION MASS-SPECTROSCOPY MEASUREMENTS
Authors: WYNANDS HA MALTA DM FOX BA VONWINDHEIM JA FLEURIAL JP IRVINE D VANDERSANDE J
Citation: Ha. Wynands et al., IMPURITY-CHARACTERIZATION AGREEMENT IN TYPE-IIB SINGLE-CRYSTAL DIAMOND BY HIGH-TEMPERATURE HALL-EFFECT, CAPACITANCE-VOLTAGE, AND SECONDARY-ION MASS-SPECTROSCOPY MEASUREMENTS, Physical review. B, Condensed matter, 49(8), 1994, pp. 5745-5748
EVALUATION OF OHMIC CONTACTS FORMED BY B-AU METALLIZATION ON DIAMOND(IMPLANTATION AND TI)
Authors: VENKATESAN V MALTA DM DAS K BELU AM
Citation: V. Venkatesan et al., EVALUATION OF OHMIC CONTACTS FORMED BY B-AU METALLIZATION ON DIAMOND(IMPLANTATION AND TI), Journal of applied physics, 74(2), 1993, pp. 1179-1187
SILICON-CARBIDE DIAMOND HETEROSTRUCTURE RECTIFYING CONTACTS
Authors: HUMPHREYS TP HUNN JD PATNAIK BK PARIKH NR MALTA DM DAS K
Citation: Tp. Humphreys et al., SILICON-CARBIDE DIAMOND HETEROSTRUCTURE RECTIFYING CONTACTS, Electronics Letters, 29(15), 1993, pp. 1332-1334
COMPARISON OF ELECTRONIC TRANSPORT IN BORON-DOPED HOMOEPITAXIAL, POLYCRYSTALLINE, AND NATURAL SINGLE-CRYSTAL DIAMOND
Authors: MALTA DM VONWINDHEIM JA FOX BA
Citation: Dm. Malta et al., COMPARISON OF ELECTRONIC TRANSPORT IN BORON-DOPED HOMOEPITAXIAL, POLYCRYSTALLINE, AND NATURAL SINGLE-CRYSTAL DIAMOND, Applied physics letters, 62(23), 1993, pp. 2926-2928
HALL-EFFECT MEASUREMENTS ON BORON-DOPED, HIGHLY ORIENTED DIAMOND FILMS GROWN ON SILICON VIA MICROWAVE PLASMA CHEMICAL-VAPOR DEPOSITION
Authors: STONER BR KAO CT MALTA DM GLASS RC
Citation: Br. Stoner et al., HALL-EFFECT MEASUREMENTS ON BORON-DOPED, HIGHLY ORIENTED DIAMOND FILMS GROWN ON SILICON VIA MICROWAVE PLASMA CHEMICAL-VAPOR DEPOSITION, Applied physics letters, 62(19), 1993, pp. 2347-2349
Risultati: 1-8 |