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Results: 1-25/26
Authors:
AKHMETEV PM
ANOSOV DV
BOLIBRUKH AA
BUKHSHTABER VM
CHERNAVSKII AV
KOLOSOV VA
MALTSEV AA
NOVIKOV SP
SMIRNOV VA
Citation: Pm. Akhmetev et al., POSTNIKOV,MIKHAIL,MIKHAILOVICH (ON HIS 70TH BIRTHDAY), Russian Mathematical Surveys, 53(2), 1998, pp. 431-433
Authors:
MALTSEV AA
MALTSEV MA
Citation: Aa. Maltsev et Ma. Maltsev, INFRARED SYNCHROTRON-ACCELERATOR DIAGNOSTIC METHODS, Technical physics, 42(4), 1997, pp. 378-384
Authors:
MALTSEV AA
Citation: Aa. Maltsev, INFRARED DIAGNOSTICS OF ELECTRON BUNCHES, Plasma physics reports, 23(5), 1997, pp. 389-395
Authors:
VORONIN SG
KONDRASHOV VD
KUZMICHEV AR
LARIN AA
LUSTOV NM
MALTSEV AA
MALTSEV MA
FEDUNOV AG
Citation: Sg. Voronin et al., SCINTILLATION HODOSCOPE FOR ACCELERATED BEAMS, Measurement techniques, 40(3), 1997, pp. 284-288
Authors:
MALTSEV AA
NOVIKOV SP
ZARELUA AV
Citation: Aa. Maltsev et al., ZIESCHANG,HEINER (ON HIS 60TH BIRTHDAY), Russian Mathematical Surveys, 52(4), 1997, pp. 881-885
Authors:
DANISHEVSKII AM
SHUMAN VB
ROGACHEV AY
GUK EG
IVANOV PA
MALTSEV AA
Citation: Am. Danishevskii et al., APPEARANCE OF BETA-PHASE CRYSTALLITES IN POROUS LAYERS OF SILICON-CARBIDE, Semiconductors, 30(6), 1996, pp. 564-567
Authors:
LEBEDEV AA
MALTSEV AA
POLETAEV NK
RASTEGAEVA MG
SAVKINA NS
STRELCHUK AM
CHELNOKOV VE
Citation: Aa. Lebedev et al., 6H-SIC DIODES FABRICATED BY COMBINED CHEMICAL-VAPOR-DEPOSITION AND SUBLIMATION EPITAXY, Semiconductors, 30(10), 1996, pp. 944-945
Authors:
BELYAKOV AA
MALTSEV AA
MEDVEDEV SY
CHEREPENNIKOV VV
Citation: Aa. Belyakov et al., EXPERIMENTAL-STUDY OF AN ADAPTIVE ACTIVE SUPPRESSION SYSTEM WITH ADDITIONAL IDENTIFICATION CHANNEL, Acoustical physics, 42(6), 1996, pp. 762-764
Authors:
MALTSEV AA
MALTSEV MA
Citation: Aa. Maltsev et Ma. Maltsev, INFRARED SYNCHROTRON ACCELERATOR DIAGNOSTICS - POSSIBILITIES AND PROSPECTS, Atomic energy, 80(3), 1996, pp. 188-195
Authors:
MALTSEV AA
MALTSEV MA
Citation: Aa. Maltsev et Ma. Maltsev, INFRARED SYNCHROTRON DIAGNOSTICS OF THE BEAMS OF ELECTRON-POSITRON STORAGE-RINGS, Measurement techniques, 39(3), 1996, pp. 331-337
Authors:
SANKIN VI
STOLICHNOV IA
MALTSEV AA
Citation: Vi. Sankin et al., STRONG WANIE-STARK LOCALIZATION IN 6H AND 4H SILICON-CARBIDE POLYTYPES, Pis'ma v Zurnal tehniceskoj fiziki, 22(21), 1996, pp. 39-44
Authors:
LEBEDEV AA
ANDREEV AN
MALTSEV AA
RASTEGAEVA WG
SAVKINA NS
CHELNOKOV VE
Citation: Aa. Lebedev et al., FABRICATION AND STUDY OF GH-SIC EPITAXIAL-DIFFUSED P-N-STRUCTURES, Semiconductors, 29(9), 1995, pp. 850-853
Authors:
MALTSEV AA
MALTSEV MA
Citation: Aa. Maltsev et Ma. Maltsev, METHOD FOR MEASURING THE INTENSITY AND SPATIAL-DISTRIBUTION OF THERMAL-RADIATION, Atomic energy, 79(2), 1995, pp. 531-534
Authors:
MALTSEV AA
MALTSEV MA
Citation: Aa. Maltsev et Ma. Maltsev, PROCEDURE FOR MEASURING THE SENSITIVITY OF PRECISION DETECTORS OF VISIBLE AND INFRARED SYNCHROTRON-RADIATION, Measurement techniques, 38(10), 1995, pp. 1194-1198
Authors:
MAKSIMOV AY
MALTSEV AA
YUSHIN NK
NIKITINA IP
Citation: Ay. Maksimov et al., SUBLIMATION EPITAXY OF 6H-SIC AND 4H-SIC ON SILICON-CARBIDE 1-INCH MONOCRYSTALLINE SUBSTRATES PREPARED FROM VOLUME BARS, Pis'ma v Zurnal tehniceskoj fiziki, 21(8), 1995, pp. 51-57
Authors:
ANDREEV AN
LEBEDEV AA
ZELENIN VV
MALTSEV AA
PASTEGAEVA MG
SAVKINA NS
SOKOLOVA TV
CHELNOKOV VE
Citation: An. Andreev et al., FRAMED EPITAXIAL-DIFFUSION DIODE BASED ON SIC-6H, Pis'ma v Zurnal tehniceskoj fiziki, 21(4), 1995, pp. 60-64
Authors:
MAKSIMOV AY
MALTSEV AA
YUSHIN NK
BARASH IS
Citation: Ay. Maksimov et al., GROWTH OF VOLUME SILICON-CARBIDE MONOCRYS TALS OF 4H AND 6H POLYTYPES, Pis'ma v Zurnal tehniceskoj fiziki, 21(10), 1995, pp. 20-24
Authors:
NIKITINA IP
GLASS RC
JANZEN E
GUSEVA NB
MALTSEV AA
Citation: Ip. Nikitina et al., STRUCTURAL-ANALYSIS OF 4H-SIC LAYERS GROWN ON 6H-SIC AND 15R-SIC SUBSTRATES, Journal of crystal growth, 152(4), 1995, pp. 292-299
Authors:
MAKSIMOV AY
MALTSEV AA
YUSHIN NK
ANDRIANOV GO
Citation: Ay. Maksimov et al., ACOUSTIC PROPERTIES OF VOLUME CRYSTAL OF 4H-POLYTYPE SILICON-CARBIDE, Pis'ma v Zurnal tehniceskoj fiziki, 20(4), 1994, pp. 45-49
Authors:
MAKSIMOV AY
MALTSEV AA
YUSHIN NK
Citation: Ay. Maksimov et al., CORRESPONDENCE OF LATTICES OF CUBIC(3C) H EXAGONAL(4H) POLYTYPES OF SILICON-CARBIDE, Pis'ma v Zurnal tehniceskoj fiziki, 20(24), 1994, pp. 50-54
Authors:
MAKSIMOV AY
MALTSEV AA
SHULMAN SG
YUSHIN NK
Citation: Ay. Maksimov et al., APPLICATION OF FERROELECTRIC-FILMS ON SIL ICON-CARBIDE, Pis'ma v Zurnal tehniceskoj fiziki, 20(1), 1994, pp. 40-43
Authors:
MALTSEV AA
Citation: Aa. Maltsev, A WINDOW FOR INFRARED RADIATION, Instruments and experimental techniques, 37(3), 1994, pp. 374-376
Authors:
KUROCHKIN IV
MALTSEV AA
Citation: Iv. Kurochkin et Aa. Maltsev, STATISTICAL OPTIMIZATION OF INTERACTION BETWEEN THE COMPONENTS OF THECONTROL LOOP EARLY IN THE DESIGN OF ERGATIC SYSTEMS, Automation and remote control, 55(7), 1994, pp. 1012-1017
Authors:
BELYAKOV AA
MALTSEV AA
MEDVEDEV SY
CHEREPENNIKOV VV
Citation: Aa. Belyakov et al., ADAPTIVE SYSTEM FOR THE ACTIVE SUPPRESSION OF A WIDE-BAND HYDROACOUSTIC NOISE FIELD GENERATED BY A TURBULENT JET IN A CONDUIT, Acoustical physics, 39(3), 1993, pp. 226-228
Authors:
MAKSIMOV AY
MALTSEV AA
YUSHIN NK
Citation: Ay. Maksimov et al., SILICON-CARBIDE USE IN INTEGRAL OPTICS, Pis'ma v Zurnal tehniceskoj fiziki, 19(9), 1993, pp. 74-78