Authors: MANSANO RD VERDONCK P MACIEL HS

Citation: Rd. Mansano et al., ANISOTROPIC REACTIVE ION ETCHING IN SILICON, USING A GRAPHITE ELECTRODE, Sensors and actuators. A, Physical, 65(2-3), 1998, pp. 180-186

Authors: MAMMANA VP MANSANO RD VERDONCK P PAVANI A SALVADORI MC

Citation: Vp. Mammana et al., DIAMOND MEMBRANES WITH CONTROLLED POROSITY, DIAMOND AND RELATED MATERIALS, 6(12), 1997, pp. 1824-1829

Authors: MANSANO RD VERDONCK P MACIEL HS

Citation: Rd. Mansano et al., MECHANISMS OF SURFACE-ROUGHNESS INDUCED IN SILICON BY FLUORINE-CONTAINING PLASMAS, Vacuum, 48(7-9), 1997, pp. 677-679

Authors: VERDONCK P HASENACK CM MANSANO RD

Citation: P. Verdonck et al., METAL CONTAMINATION OF SILICON-WAFERS INDUCED BY REACTIVE ION ETCHINGPLASMAS AND ITS BEHAVIOR UPON SUBSEQUENT CLEANING PROCEDURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 538-542

Authors: MANSANO RD VERDONCK P MACIEL HS

Citation: Rd. Mansano et al., DEEP TRENCH ETCHING IN SILICON WITH FLUORINE-CONTAINING PLASMAS, Applied surface science, 101, 1996, pp. 583-586