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ULTRATHIN TA2O5 FILM GROWTH BY CHEMICAL-VAPOR-DEPOSITION OF TA(N(CH3)(2))(5) AND O-2 ON BARE AND SIOXNY-PASSIVATED SI(100) FOR GATE DIELECTRIC APPLICATIONS
Authors: SON KA MAO AY KIM BY LIU F PYLANT ED HESS DA WHITE JM KWONG DL ROBERTS DA VRTIS RN
Citation: Ka. Son et al., ULTRATHIN TA2O5 FILM GROWTH BY CHEMICAL-VAPOR-DEPOSITION OF TA(N(CH3)(2))(5) AND O-2 ON BARE AND SIOXNY-PASSIVATED SI(100) FOR GATE DIELECTRIC APPLICATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1670-1675
CHEMICAL-VAPOR-DEPOSITION OF ULTRATHIN TA2O5 FILMS USING TA[N(CH3)(2)](5)
Authors: SON KA MAO AY SUN YM KIM BY LIU F KAMATH A WHITE JM KWONG DL ROBERTS DA VRTIS RN
Citation: Ka. Son et al., CHEMICAL-VAPOR-DEPOSITION OF ULTRATHIN TA2O5 FILMS USING TA[N(CH3)(2)](5), Applied physics letters, 72(10), 1998, pp. 1187-1189
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