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Citation: Da. Ahmari et al., HIGH-SPEED INGAP GAAS HBTS WITH A STRAINED INXGA1-XAS BASE/, IEEE electron device letters, 17(5), 1996, pp. 226-228

Authors: KRUSE J MARES PJ SCHERRER D FENG M STILLMAN GE

Citation: J. Kruse et al., TEMPERATURE-DEPENDENT STUDY OF CARBON-DOPED INP INGAAS HBTS/, IEEE electron device letters, 17(1), 1996, pp. 10-12

Authors: SCHERRER D APOSTOLAKIS P MIDDLETON J MARES PJ KRUSE J FENG M

Citation: D. Scherrer et al., NOISE AND GAIN COMPARISON OF 0.25 MU-M GATE MESFETS AND PHEMTS FOR LOW-POWER WIRELESS COMMUNICATION CIRCUITS, Solid-state electronics, 39(4), 1996, pp. 431-437

Authors: FRESINA MT AHMARI DA MARES PJ HARTMANN QJ FENG M STILLMAN GE

Citation: Mt. Fresina et al., HIGH-SPEED, LOW-NOISE INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE electron device letters, 16(12), 1995, pp. 540-541

Authors: MARES PJ CHUANG SL

Citation: Pj. Mares et Sl. Chuang, MODELING OF SELF-ELECTRO-OPTIC-EFFECT DEVICES, Journal of applied physics, 74(2), 1993, pp. 1388-1397