Authors:
JONES JT
CROKE ET
GARLAND CM
MARSH OJ
MCGILL TC
Citation: Jt. Jones et al., EPITAXIAL SILICON GROWN ON CEO2 SI(111) STRUCTURE BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2686-2689
Authors:
PETTERSSON PO
ZUR A
DANIEL ES
LEVY HJ
MARSH OJ
MCGILL TC
Citation: Po. Pettersson et al., DEPENDENCE OF THE I-V CURVE OF A METAL-INSULATOR-SEMICONDUCTOR SWITCHON INSULATOR THICKNESS - AN EXPERIMENTAL AND THEORETICAL INVESTIGATION, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 286-292
Citation: Es. Daniel et al., MACROSCOPIC AND MICROSCOPIC STUDIES OF ELECTRICAL-PROPERTIES OF VERY THIN SILICON DIOXIDE SUBJECT TO ELECTRICAL STRESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1089-1096