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Results: 1-18 |
Results: 18
OPTOELECTRONIC DC AND RF BEHAVIOR OF INP INGAAS BASED HEMTS/
Authors: MARSO M HORSTMANN M HARDTDEGEN H KORDOS P
Citation: M. Marso et al., OPTOELECTRONIC DC AND RF BEHAVIOR OF INP INGAAS BASED HEMTS/, Solid-state electronics, 42(2), 1998, pp. 197-200
550GHZ BANDWIDTH PHOTODETECTOR ON LOW-TEMPERATURE-GROWN MOLECULAR-BEAM EPITAXIAL GAAS
Authors: KORDOS P FORSTER A MARSO M RUDERS F
Citation: P. Kordos et al., 550GHZ BANDWIDTH PHOTODETECTOR ON LOW-TEMPERATURE-GROWN MOLECULAR-BEAM EPITAXIAL GAAS, Electronics Letters, 34(1), 1998, pp. 119-120
CONDUCTION IN NONSTOICHIOMETRIC MOLECULAR-BEAM EPITAXIAL GAAS GROWN ABOVE THE CRITICAL THICKNESS
Authors: KORDOS P MARSO M LUYSBERG M
Citation: P. Kordos et al., CONDUCTION IN NONSTOICHIOMETRIC MOLECULAR-BEAM EPITAXIAL GAAS GROWN ABOVE THE CRITICAL THICKNESS, Applied physics letters, 72(15), 1998, pp. 1851-1853
COLOR-SENSITIVE SI-PHOTODIODE USING POROUS SILICON INTERFERENCE FILTERS
Authors: KRUGER M BERGER MG MARSO M REETZ W EICKHOFF T LOO R VESCAN L THONISSEN M LUTH H ARENSFISCHER R HILBRICH S THEISS W
Citation: M. Kruger et al., COLOR-SENSITIVE SI-PHOTODIODE USING POROUS SILICON INTERFERENCE FILTERS, JPN J A P 2, 36(1AB), 1997, pp. 24-26
0.1-MU-M T-GATE AL-FREE INP INGAAS/INP PHEMTS FOR W-BAND APPLICATIONSUSING A NITROGEN CARRIER FOR LP-MOCVD GROWTH/
Authors: SCHIMPF K SOMMER M HORSTMANN M HOLLFELDER M VANDERHART A MARSO M KORDOS P LUTH H
Citation: K. Schimpf et al., 0.1-MU-M T-GATE AL-FREE INP INGAAS/INP PHEMTS FOR W-BAND APPLICATIONSUSING A NITROGEN CARRIER FOR LP-MOCVD GROWTH/, IEEE electron device letters, 18(4), 1997, pp. 144-146
COLOR-SENSITIVE PHOTODETECTOR BASED ON POROUS SILICON SUPERLATTICES
Authors: KRUGER M MARSO M BERGER MG THONISSEN M BILLAT S LOO R REETZ W LUTH H HILBRICH S ARENSFISCHER R GROSSE P
Citation: M. Kruger et al., COLOR-SENSITIVE PHOTODETECTOR BASED ON POROUS SILICON SUPERLATTICES, Thin solid films, 297(1-2), 1997, pp. 241-244
ELECTRICAL BEHAVIOR OF THE INP INGAAS BASED MSM-2DEG DIODE/
Authors: MARSO M HORSTMANN M HARDTDEGEN H KORDOS P LUTH H
Citation: M. Marso et al., ELECTRICAL BEHAVIOR OF THE INP INGAAS BASED MSM-2DEG DIODE/, Solid-state electronics, 41(1), 1997, pp. 25-31
SPACE-CHARGE CONTROLLED CONDUCTION IN LOW-TEMPERATURE-GROWN MOLECULAR-BEAM EPITAXIAL GAAS
Authors: KORDOS P MARSO M FORSTER A DARMO J BETKO J NIMTZ G
Citation: P. Kordos et al., SPACE-CHARGE CONTROLLED CONDUCTION IN LOW-TEMPERATURE-GROWN MOLECULAR-BEAM EPITAXIAL GAAS, Applied physics letters, 71(8), 1997, pp. 1118-1120
16GHZ BANDWIDTH MSM PHOTODETECTOR AND 45 85GHZ F(T)/F(MAX) HEMT PREPARED ON AN IDENTICAL INGAAS/INP LAYER STRUCTURE/
Authors: HORSTMANN M SCHIMPF K MARSO M FOX A KORDOS P
Citation: M. Horstmann et al., 16GHZ BANDWIDTH MSM PHOTODETECTOR AND 45 85GHZ F(T)/F(MAX) HEMT PREPARED ON AN IDENTICAL INGAAS/INP LAYER STRUCTURE/, Electronics Letters, 32(8), 1996, pp. 763-764
THERMIONIC FIELD-EMISSION IN P-BARRIER ENHANCED INP INGAAS/INP HEMTS/
Authors: SCHIMPF K HORSTMANN M HARDTDEGEN H MARSO M KORDOS P
Citation: K. Schimpf et al., THERMIONIC FIELD-EMISSION IN P-BARRIER ENHANCED INP INGAAS/INP HEMTS/, Electronics Letters, 32(23), 1996, pp. 2132-2134
RESPONSIVITY ENHANCEMENT OF INGAAS BASED MSM PHOTODETECTORS USING 2DEG LAYER SEQUENCE AND SEMITRANSPARENT ELECTRODES
Authors: HORSTMANN M MARSO M MUTTERSBACH J SCHIMPF K KORDOS P
Citation: M. Horstmann et al., RESPONSIVITY ENHANCEMENT OF INGAAS BASED MSM PHOTODETECTORS USING 2DEG LAYER SEQUENCE AND SEMITRANSPARENT ELECTRODES, Electronics Letters, 32(17), 1996, pp. 1613-1615
ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH ULTRATHIN LANGMUIR-BLODGETT MEMBRANES
Authors: SCHONING MJ SAUKE M STEFFEN A MARSO M KORDOS P LUTH H KAUFFMANN F ERBACH R HOFFMANN B
Citation: Mj. Schoning et al., ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH ULTRATHIN LANGMUIR-BLODGETT MEMBRANES, Sensors and actuators. B, Chemical, 27(1-3), 1995, pp. 325-328
NOVEL HEMT LAYOUT - THE ROUNDHEMT
Authors: MARSO M SCHIMPF K FOX A VANDERHART A HARDTDEGEN H HOLLFELDER M KORDOS P LUTH H
Citation: M. Marso et al., NOVEL HEMT LAYOUT - THE ROUNDHEMT, Electronics Letters, 31(7), 1995, pp. 589-591
AN EXTENDED QUANTUM MODEL FOR POROUS SILICON FORMATION
Authors: FROHNHOFF S MARSO M BERGER MG THONISSEN M LUTH H MUNDER H
Citation: S. Frohnhoff et al., AN EXTENDED QUANTUM MODEL FOR POROUS SILICON FORMATION, Journal of the Electrochemical Society, 142(2), 1995, pp. 615-620
INP INGAAS PHOTODETECTOR BASED ON A HIGH-ELECTRON-MOBILITY TRANSISTORLAYER STRUCTURE - ITS RESPONSE AT 1.3 MU-M WAVELENGTH/
Authors: HORSTMANN M MARSO M FOX A RUDERS F HOLLFELDER M HARDTDEGEN H KORDOS P LUTH H
Citation: M. Horstmann et al., INP INGAAS PHOTODETECTOR BASED ON A HIGH-ELECTRON-MOBILITY TRANSISTORLAYER STRUCTURE - ITS RESPONSE AT 1.3 MU-M WAVELENGTH/, Applied physics letters, 67(1), 1995, pp. 106-108
PHOSPHORUS REDISTRIBUTION DURING THE FORMATION OF BURIED COSI2 LAYERSBY ION-BEAM SYNTHESIS
Authors: SCHUPPEN A JEBASINSKI R MANTL S MARSO M LUTH H BREUER U HOLZBRECHER H
Citation: A. Schuppen et al., PHOSPHORUS REDISTRIBUTION DURING THE FORMATION OF BURIED COSI2 LAYERSBY ION-BEAM SYNTHESIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 143-147
OVERGROWN SILICON PBTS - CALCULATIONS AND MEASUREMENTS
Authors: SCHUPPEN A MARSO M LUTH H
Citation: A. Schuppen et al., OVERGROWN SILICON PBTS - CALCULATIONS AND MEASUREMENTS, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 751-760
SUBMICROMETER SILICON PERMEABLE BASE TRANSISTORS WITH BURIED COSI2 GATES
Authors: SCHUPPEN A VESCAN L MARSO M VANDERHART A LUTH H BENEKING H
Citation: A. Schuppen et al., SUBMICROMETER SILICON PERMEABLE BASE TRANSISTORS WITH BURIED COSI2 GATES, Electronics Letters, 29(2), 1993, pp. 215-217
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