Authors: SOBOLEV NA GERSTER J MAUCKNER G WOLPERT M LIMMER W THONKE K SAUER R PRESTING H KONIG U

Citation: Na. Sobolev et al., ION-BEAM-INDUCED STRUCTURAL TRANSFORMATIONS IN SIMGEN SUPERLATTICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1057-1061

Authors: BINDER M EDELMANN T METZGER TH MAUCKNER G GOERIGK G PEISL J

Citation: M. Binder et al., BIMODAL SIZE DISTRIBUTION IN P(-) POROUS SILICON STUDIED BY SMALL-ANGLE X-RAY-SCATTERING, Thin solid films, 276(1-2), 1996, pp. 65-68

Authors: MAUCKNER G REBITZER W THONKE K SAUER R

Citation: G. Mauckner et al., QUANTUM CONFINEMENT EFFECTS IN ABSORPTION AND EMISSION OF FREESTANDING POROUS SILICON, Solid state communications, 91(9), 1994, pp. 717-720

Authors: BAIER T WALTER T MAUCKNER G SCHNEIDER J THONKE K SAUER R

Citation: T. Baier et al., MEASUREMENT OF TIME-RESOLVED PHOTOLUMINESCENCE OF SEMICONDUCTORS USING CORRELATIONAL ANALYSIS, Review of scientific instruments, 65(9), 1994, pp. 2890-2893

Authors: MAUCKNER G THONKE K BAIER T WALTER T SAUER R

Citation: G. Mauckner et al., TEMPERATURE-DEPENDENT LIFETIME DISTRIBUTION OF THE PHOTOLUMINESCENCE S-BAND IN POROUS SILICON, Journal of applied physics, 75(8), 1994, pp. 4167-4170

Authors: MAUCKNER G WALTER T BAIER T THONKE K SAUER R HOUBERTZ R MEMMERT U BEHM RJ

Citation: G. Mauckner et al., LUMINESCENCE PROPERTIES AND SURFACE-TOPOGRAPHY OF POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 211-215