AAAAAA

   
Results: 1-9 |
Results: 9
PLASMA-ETCHING OF SUBMICRON DEVICES - IN-SITU MONITORING AND CONTROL BY MULTIWAVELENGTH ELLIPSOMETRY
Authors: MAYNARD HL LAYADI N LEE JTC
Citation: Hl. Maynard et al., PLASMA-ETCHING OF SUBMICRON DEVICES - IN-SITU MONITORING AND CONTROL BY MULTIWAVELENGTH ELLIPSOMETRY, Thin solid films, 313, 1998, pp. 398-405
POLYCIDE GATE ETCHING USING A HELICAL RESONATOR ON AN APPLIED MATERIALS PRECISION-5000 PLATFORM
Authors: CHANG CP KLEMENS FP MAYNARD HL LEE TC KORNBLIT A IBBOTSON DE
Citation: Cp. Chang et al., POLYCIDE GATE ETCHING USING A HELICAL RESONATOR ON AN APPLIED MATERIALS PRECISION-5000 PLATFORM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 646-651
MULTIWAVELENGTH ELLIPSOMETRY FOR REAL-TIME PROCESS-CONTROL OF THE PLASMA-ETCHING OF PATTERNED SAMPLES
Authors: MAYNARD HL LAYADI N LEE JTC
Citation: Hl. Maynard et al., MULTIWAVELENGTH ELLIPSOMETRY FOR REAL-TIME PROCESS-CONTROL OF THE PLASMA-ETCHING OF PATTERNED SAMPLES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 109-115
COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .5. POLYSILICON ETCHING RATE, UNIFORMITY, PROFILE CONTROL, AND BULK PLASMA PROPERTIES IN A HELICAL RESONATOR PLASMA SOURCE
Authors: LEE JTC LAYADI N GUINN KV MAYNARD HL KLEMENS FP IBBOTSON DE TEPERMEISTER I EGAN PO RICHARDSON RA
Citation: Jtc. Lee et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .5. POLYSILICON ETCHING RATE, UNIFORMITY, PROFILE CONTROL, AND BULK PLASMA PROPERTIES IN A HELICAL RESONATOR PLASMA SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2510-2518
METAL STACK ETCHING USING A HELICAL RESONATOR PLASMA
Authors: LABELLE CB MAYNARD HL LEE JTC
Citation: Cb. Labelle et al., METAL STACK ETCHING USING A HELICAL RESONATOR PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2574-2581
PLASMA-ETCHING ENDPOINTING BY MONITORING RADIOFREQUENCY POWER-SYSTEMSWITH AN ARTIFICIAL NEURAL-NETWORK
Authors: MAYNARD HL RIETMAN EA LEE JTC IBBOTSON DE
Citation: Hl. Maynard et al., PLASMA-ETCHING ENDPOINTING BY MONITORING RADIOFREQUENCY POWER-SYSTEMSWITH AN ARTIFICIAL NEURAL-NETWORK, Journal of the Electrochemical Society, 143(6), 1996, pp. 2029-2035
THIN-FILM INTERFEROMETRY OF PATTERNED SURFACES
Authors: MAYNARD HL HERSHKOWITZ N
Citation: Hl. Maynard et N. Hershkowitz, THIN-FILM INTERFEROMETRY OF PATTERNED SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 848-857
EXPERIMENTS WITH BACK SIDE GAS-COOLING USING AN ELECTROSTATIC WAFER HOLDER IN AN ELECTRON-CYCLOTRON-RESONANCE ETCHING TOOL
Authors: MEYER JA KIRMSE KHR JENG JS PEREZMONTERO SY MAYNARD HL WENDT AE TAYLOR JW HERSHKOWITZ N
Citation: Ja. Meyer et al., EXPERIMENTS WITH BACK SIDE GAS-COOLING USING AN ELECTROSTATIC WAFER HOLDER IN AN ELECTRON-CYCLOTRON-RESONANCE ETCHING TOOL, Applied physics letters, 64(15), 1994, pp. 1926-1928
NEW ALTERNATIVE GRAPHING METHODS FOR THIN-FILM INTERFEROMETRY DATA
Authors: MAYNARD HL HERSHKOWITZ N
Citation: Hl. Maynard et N. Hershkowitz, NEW ALTERNATIVE GRAPHING METHODS FOR THIN-FILM INTERFEROMETRY DATA, IEEE transactions on semiconductor manufacturing, 6(4), 1993, pp. 373-377
Risultati: 1-9 |