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Results: 1-7 |
Results: 7

Authors: MAZZOLA MS YOUNAN NH SOUNDARARAJAN R SADDOW SE
Citation: Ms. Mazzola et al., APPLICATION OF THE SINGULAR VALVE DECOMPOSITION-PRONY METHOD FOR ANALYZING DEEP-LEVEL TRANSIENT SPECTROSCOPY CAPACITANCE TRANSIENTS, Review of scientific instruments, 69(6), 1998, pp. 2459-2463

Authors: MAZZOLA MS
Citation: Ms. Mazzola, RULE OF THUMB OBJECTION OVERRULED, Physics today, 48(2), 1995, pp. 82-82

Authors: SADDOW SE TIPTON CW MAZZOLA MS
Citation: Se. Saddow et al., HOLE CAPTURE BY D-CENTER DEFECTS IN GH-SILICON CARBIDE, Journal of applied physics, 77(1), 1995, pp. 318-322

Authors: STOUDT DC BRINKMANN RP ROUSH RA MAZZOLA MS ZUTAVERN FJ LOUBRIEL GM
Citation: Dc. Stoudt et al., EFFECTS OF 1-MEV NEUTRON-IRRADIATION ON THE OPERATION OF A BISTABLE OPTICALLY CONTROLLED SEMICONDUCTOR SWITCH (BOSS), I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 913-919

Authors: MAZZOLA MS SADDOW SE NEUDECK PG LAKDAWALA VK WE S
Citation: Ms. Mazzola et al., OBSERVATION OF THE D-CENTER IN 6H-SIC P-N DIODES GROWN BY CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 64(20), 1994, pp. 2730-2732

Authors: ROUSH RA MAZZOLA MS STOUDT DC
Citation: Ra. Roush et al., INFRARED PHOTOCONDUCTIVITY VIA DEEP COPPER ACCEPTORS IN SILICON-DOPED, COPPER-COMPENSATED GALLIUM-ARSENIDE PHOTOCONDUCTIVE SWITCHES, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1081-1086

Authors: ROUSH RA STOUDT DC MAZZOLA MS
Citation: Ra. Roush et al., COMPENSATION OF SHALLOW SILICON DONORS BY DEEP COPPER ACCEPTORS IN GALLIUM-ARSENIDE, Applied physics letters, 62(21), 1993, pp. 2670-2672
Risultati: 1-7 |