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Results: 1-12 |
Results: 12
A 3-DIMENSIONAL, PHYSICALLY-BASED COMPACT MODEL FOR IC VDMOS TRANSISTORS
Authors: VICTORY J MCANDREW CC THOMA R
Citation: J. Victory et al., A 3-DIMENSIONAL, PHYSICALLY-BASED COMPACT MODEL FOR IC VDMOS TRANSISTORS, Microelectronics, 29(7), 1998, pp. 451-459
AN IMPROVED MOSFET MODEL FOR CIRCUIT SIMULATION
Authors: JOARDAR K GULLAPALLI KK MCANDREW CC BURNHAM ME WILD A
Citation: K. Joardar et al., AN IMPROVED MOSFET MODEL FOR CIRCUIT SIMULATION, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 134-148
INTRODUCTION TO THE 1997 IEEE-BIPOLAR BICMOS-CIRCUITS-AND-TECHNOLOGY-MEETING SPECIAL ISSUE/
Authors: MCANDREW CC
Citation: Cc. Mcandrew, INTRODUCTION TO THE 1997 IEEE-BIPOLAR BICMOS-CIRCUITS-AND-TECHNOLOGY-MEETING SPECIAL ISSUE/, IEEE journal of solid-state circuits, 33(9), 1998, pp. 1350-1351
A 4-TERMINAL COMPACT MODEL FOR HIGH-VOLTAGE DIFFUSED RESISTORS WITH FIELD PLATES
Authors: VICTORY J MCANDREW CC HALL J ZUNINO M
Citation: J. Victory et al., A 4-TERMINAL COMPACT MODEL FOR HIGH-VOLTAGE DIFFUSED RESISTORS WITH FIELD PLATES, IEEE journal of solid-state circuits, 33(9), 1998, pp. 1453-1458
PRACTICAL MODELING FOR CIRCUIT SIMULATION
Authors: MCANDREW CC
Citation: Cc. Mcandrew, PRACTICAL MODELING FOR CIRCUIT SIMULATION, IEEE journal of solid-state circuits, 33(3), 1998, pp. 439-448
A 3-TERMINAL MODEL FOR DIFFUSED AND ION-IMPLANTED RESISTORS
Authors: BOOTH RVH MCANDREW CC
Citation: Rvh. Booth et Cc. Mcandrew, A 3-TERMINAL MODEL FOR DIFFUSED AND ION-IMPLANTED RESISTORS, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 809-814
VBIC95, THE VERTICAL BIPOLAR INTER-COMPANY MODEL
Authors: MCANDREW CC SEITCHIK JA BOWERS DF DUNN M FOISY M GETREU I MCSWAIN M MOINIAN S PARKER J ROULSTON DJ SCHROTER M VANWIJNEN P WAGNER LF
Citation: Cc. Mcandrew et al., VBIC95, THE VERTICAL BIPOLAR INTER-COMPANY MODEL, IEEE journal of solid-state circuits, 31(10), 1996, pp. 1476-1483
EARLY EFFECT MODELING IN SPICE
Authors: MCANDREW CC NAGEL LW
Citation: Cc. Mcandrew et Lw. Nagel, EARLY EFFECT MODELING IN SPICE, IEEE journal of solid-state circuits, 31(1), 1996, pp. 136-138
TECHNOLOGY CAD AT AT-AND-T
Authors: LLOYD P MCANDREW CC MCLENNAN MJ NASSIF SR SINGHAL K SINGHAL K ZEITZOFF PM DARWISH MN HARUTA K LENTZ JL VUONG HH PINTO MR RAFFERTY CS KIZILYALLI IC
Citation: P. Lloyd et al., TECHNOLOGY CAD AT AT-AND-T, Microelectronics, 26(2-3), 1995, pp. 79-97
IMPROVED CIRCUIT TECHNIQUE TO REDUCE H(FE) DEGRADATION IN BIPOLAR OUTPUT DRIVERS
Authors: KIZILYALLI IC MCANDREW CC
Citation: Ic. Kizilyalli et Cc. Mcandrew, IMPROVED CIRCUIT TECHNIQUE TO REDUCE H(FE) DEGRADATION IN BIPOLAR OUTPUT DRIVERS, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 573-574
A C-INFINITY-CONTINUOUS DEPLETION CAPACITANCE MODEL
Authors: MCANDREW CC BHATTACHARYYA BK WING O
Citation: Cc. Mcandrew et al., A C-INFINITY-CONTINUOUS DEPLETION CAPACITANCE MODEL, IEEE transactions on computer-aided design of integrated circuits and systems, 12(6), 1993, pp. 825-828
MOSFET EFFECTIVE CHANNEL WIDTH DETERMINATION BY NONLINEAR OPTIMIZATION
Authors: MCANDREW CC LAYMAN PA ASHTON RA
Citation: Cc. Mcandrew et al., MOSFET EFFECTIVE CHANNEL WIDTH DETERMINATION BY NONLINEAR OPTIMIZATION, Solid-state electronics, 36(12), 1993, pp. 1717-1723
Risultati: 1-12 |