Authors:
UKRAINTSEV VA
MCGLOTHLIN R
GRIBELYUK MA
EDWARDS H
Citation: Va. Ukraintsev et al., STRONG EFFECT OF DOPANT CONCENTRATION GRADIENT AN ETCHING RATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 476-480
Citation: H. Edwards et al., VERTICAL METROLOGY USING SCANNING-PROBE MICROSCOPES - IMAGING DISTORTIONS AND MEASUREMENT REPEATABILITY, Journal of applied physics, 83(8), 1998, pp. 3952-3971
Authors:
EDWARDS H
MCGLOTHLIN R
SANMARTIN R
U E
GRIBELYUK M
MAHAFFY R
SHIH CK
LIST RS
UKRAINTSEV VA
Citation: H. Edwards et al., SCANNING CAPACITANCE SPECTROSCOPY - AN ANALYTICAL TECHNIQUE FOR PN-JUNCTION DELINEATION IN SI DEVICES, Applied physics letters, 72(6), 1998, pp. 698-700