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STUDY OF HALL AND EFFECTIVE MOBILITIES IN PSEUDOMORPHIC SI1-XGEX P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AT ROOM-TEMPERATURE AND 4.2 K
Authors: LANDER RJP EMELEUS CJ MCGREGOR BM PARKER EHC WHALL TE EVANS AGR KENNEDY GP
Citation: Rjp. Lander et al., STUDY OF HALL AND EFFECTIVE MOBILITIES IN PSEUDOMORPHIC SI1-XGEX P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AT ROOM-TEMPERATURE AND 4.2 K, Journal of applied physics, 82(10), 1997, pp. 5210-5216
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